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公开(公告)号：US20210256687A1
公开(公告)日：2021-08-19
申请号：US16794172
申请日：2020-02-18
Applicant: Applied Materials Israel Ltd.
Inventor： Doron GIRMONSKY , Rafael BEN AMI , Boaz COHEN , Dror SHEMESH
Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.
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