公开(公告)号：US20210256687A1

公开(公告)日：2021-08-19

申请号：US16794172

申请日：2020-02-18

Applicant: Applied Materials Israel Ltd.

Inventor： Doron GIRMONSKY ,  Rafael BEN AMI ,  Boaz COHEN ,  Dror SHEMESH

IPC: G06T7/00 ,  G06F17/18

Abstract: There is provided a method and a system configured to obtain an image of a one or more first areas of a semiconductor specimen acquired by an examination tool, determine data Datt informative of defectivity in the one or more first areas, determine one or more second areas of the semiconductor specimen for which presence of a defect is suspected based at least on an evolution of Datt, or of data correlated to Datt, in the one or more first areas, and select the one or more second areas for inspection by the examination tool.

公开(公告)号：US20180336675A1

公开(公告)日：2018-11-22

申请号：US15982918

申请日：2018-05-17

Applicant: Applied Materials Israel Ltd.

Inventor： Ishai SCHWARZBAND ,  Yan AVNIEL ,  Sergey KHRISTO ,  Mor BARAM ,  Shimon LEVI ,  Doron GIRMONSKY ,  Roman KRIS

IPC: G06T7/00

Abstract: An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.