公开(公告)号：US12136796B2

公开(公告)日：2024-11-05

申请号：US17405416

申请日：2021-08-18

Applicant: Applied Optoelectronics, Inc.

Inventor： Dapeng Xu ,  Jin Huang ,  Huanlin Zhang

IPC: H01S3/10 ,  H01S5/026 ,  H01S5/065 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/028

Abstract: The present disclosure is generally directed to an EML with a filter layer disposed between an active region of the EML and a substrate of the EML to absorb a portion of unmodulated light energy, and preferably the unmodulated light energy caused by transverse electric (TE) substrate mode. The filter layer preferably comprises a material with an energy band gap (Eg) that is less than the energy band gap of the predetermined channel wavelength to absorb unmodulated laser light.