公开(公告)号：US20220415385A1

公开(公告)日：2022-12-29

申请号：US17897716

申请日：2022-08-29

Applicant: Arm Limited

Inventor： Rajiv Kumar Sisodia ,  Disha Singh ,  Gautam Garg ,  Srinivasan Srinath ,  Georgy Jacob

IPC: G11C11/418 ,  G11C11/412 ,  G11C11/419

Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.

公开(公告)号：US20210249070A1

公开(公告)日：2021-08-12

申请号：US16786779

申请日：2020-02-10

Applicant: Arm Limited

Inventor： Rajiv Kumar Sisodia ,  Disha Singh ,  Gautam Garg ,  Srinivasan Srinath ,  Georgy Jacob

IPC: G11C11/418 ,  G11C11/419 ,  G11C11/412

Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.

公开(公告)号：US11830542B2

公开(公告)日：2023-11-28

申请号：US17897716

申请日：2022-08-29

Applicant: Arm Limited

Inventor： Rajiv Kumar Sisodia ,  Disha Singh ,  Gautam Garg ,  Srinivasan Srinath ,  Georgy Jacob

IPC: G11C11/00 ,  G11C11/418 ,  G11C11/412 ,  G11C11/419

CPC classification number: G11C11/418 ,  G11C11/412 ,  G11C11/419

Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.

公开(公告)号：US11430506B2

公开(公告)日：2022-08-30

申请号：US16786779

申请日：2020-02-10

Applicant: Arm Limited

Inventor： Rajiv Kumar Sisodia ,  Disha Singh ,  Gautam Garg ,  Srinivasan Srinath ,  Georgy Jacob

IPC: G11C11/00 ,  G11C11/418 ,  G11C11/412 ,  G11C11/419

Abstract: Various implementations described herein are directed to a device having a first read wordline formed in a first metal layer and a read wordline driver having an output node coupled to one or more memory cells via the first read wordline formed in the first metal layer. The device may include a second read wordline formed in a second metal layer that is different than the first metal layer, and the read wordline driver may have an input node coupled to the second read wordline formed in the second metal layer.