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公开(公告)号:US20240135988A1
公开(公告)日:2024-04-25
申请号:US17971226
申请日:2022-10-20
Applicant: Arm Limited
Inventor: Vianney Antoine Choserot , Andy Wangkun Chen , Yew Keong Chong , Sriram Thyagarajan
IPC: G11C11/412 , G11C11/418 , G11C11/419
CPC classification number: G11C11/412 , G11C11/418 , G11C11/419
Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.
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公开(公告)号:US12300338B2
公开(公告)日:2025-05-13
申请号:US17953271
申请日:2022-09-26
Applicant: Arm Limited
Inventor: Andy Wangkun Chen , Vianney Antoine Choserot , Yew Keong Chong , Khushal Gelda
Abstract: Various implementations described herein are related to a device having first datapath circuitry with input devices that receive data from a number of write ports and provide first data. The device may have second datapath circuitry with logic gates that receive the first data from the input devices and provide the first data based on a read bitline signal. The device may have third datapath circuitry with output devices that receive the first data from the logic gates and provide second data to a number of read ports. Also, the number of read ports is greater than the number of write ports.
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公开(公告)号:US12300310B2
公开(公告)日:2025-05-13
申请号:US17971226
申请日:2022-10-21
Applicant: Arm Limited
Inventor: Vianney Antoine Choserot , Andy Wangkun Chen , Yew Keong Chong , Sriram Thyagarajan
IPC: G11C11/41 , G11C11/412 , G11C11/418 , G11C11/419
Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.
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公开(公告)号:US20240233814A9
公开(公告)日:2024-07-11
申请号:US17971226
申请日:2022-10-21
Applicant: Arm Limited
Inventor: Vianney Antoine Choserot , Andy Wangkun Chen , Yew Keong Chong , Sriram Thyagarajan
IPC: G11C11/412 , G11C11/418 , G11C11/419
CPC classification number: G11C11/412 , G11C11/418 , G11C11/419
Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.
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