Multi-Port Bitcell Architecture
    1.
    发明公开

    公开(公告)号:US20240135988A1

    公开(公告)日:2024-04-25

    申请号:US17971226

    申请日:2022-10-20

    Applicant: Arm Limited

    CPC classification number: G11C11/412 G11C11/418 G11C11/419

    Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.

    Configurable scan chain architecture for multi-port memory

    公开(公告)号:US12300338B2

    公开(公告)日:2025-05-13

    申请号:US17953271

    申请日:2022-09-26

    Applicant: Arm Limited

    Abstract: Various implementations described herein are related to a device having first datapath circuitry with input devices that receive data from a number of write ports and provide first data. The device may have second datapath circuitry with logic gates that receive the first data from the input devices and provide the first data based on a read bitline signal. The device may have third datapath circuitry with output devices that receive the first data from the logic gates and provide second data to a number of read ports. Also, the number of read ports is greater than the number of write ports.

    Multi-port bitcell architecture
    3.
    发明授权

    公开(公告)号:US12300310B2

    公开(公告)日:2025-05-13

    申请号:US17971226

    申请日:2022-10-21

    Applicant: Arm Limited

    Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.

    Multi-Port Bitcell Architecture
    4.
    发明公开

    公开(公告)号:US20240233814A9

    公开(公告)日:2024-07-11

    申请号:US17971226

    申请日:2022-10-21

    Applicant: Arm Limited

    CPC classification number: G11C11/412 G11C11/418 G11C11/419

    Abstract: Various implementations described herein are related to a device having a storage node with a bitcell. The device may have a first stage that performs a first write based on an internal bitline signal, a first write wordline signal and a second write wordline signal. The first stage outputs the internal bitline signal. The device may have a second stage that receives the internal bitline signal and performs a second write of the internal bitline signal to the bitcell. The device may have a third stage with write wordline ports and write bitline ports. The third stage provides the internal bitline signal based on a selected write wordline signal from a write wordline port of the write wordline ports and based on a selected bitline signal based on a write bitline port of the write bitline ports.

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