公开(公告)号：US20110214714A1

公开(公告)日：2011-09-08

申请号：US12999160

申请日：2009-06-16

申请人： Armin Gerhard Aberle ,  Per Ingemar Widenborg ,  Peter Jaroslav Gress

发明人： Armin Gerhard Aberle ,  Per Ingemar Widenborg ,  Peter Jaroslav Gress

IPC分类号： H01L31/048 ,  H01L31/18

CPC分类号： H01L31/0504 ,  H01L31/0201 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

摘要： A thin-film solar cell module, and a method of interconnecting two or more thin-film solar cells on a foreign supporting substrate. The method comprises the step of wire-bonding an air-side electrode of one thin-film solar cell to a substrate-side electrode of an adjacent solar cell, such that said thin-film solar cells are connected in series.

摘要翻译： 薄膜太阳能电池模块以及在外部支撑基板上互连两个以上的薄膜太阳能电池的方法。 该方法包括将一个薄膜太阳能电池的空气侧电极与相邻的太阳能电池的基板侧电极导线接合的步骤，使得所述薄膜太阳能电池串联连接。

公开(公告)号：US20060252235A1

公开(公告)日：2006-11-09

申请号：US10530848

申请日：2003-10-07

申请人： Armin Aberle ,  Per Ingemar Widenborg ,  Axel Straub ,  Dirk-Holger Neuhaus ,  Oliver Hartley ,  Nils-Peter Harder

发明人： Armin Aberle ,  Per Ingemar Widenborg ,  Axel Straub ,  Dirk-Holger Neuhaus ,  Oliver Hartley ,  Nils-Peter Harder

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/2022 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The invention provides a method of forming a polycrystalline semiconductor film on a supporting substrate of foreign material. The method involves depositing a metal film onto the substrate, forming a film of metal oxide and/or hydroxide on a substrate of the metal, and forming a layer of an amorphous semiconductor material over a surface of the metal oxide and/or hydroxide film. The entire sample is then heated to a temperature at which the semiconductor layer is absorbed into the metal layer and deposited as a polycrystalline layer onto the target surface by metal-induced crystallization. The metal is left as an overlayer covering the deposited polycrystalline layer, with semiconductor inclusions in the metal layer. The polycrystalline semiconductor film and the overlayer are generated by porous interfacial metal oxide nd/or hydroxide film. The metal in the overlayer and the interfacial metal oxide and/or hydroxide film are then removed with an etch which underetches the semiconductor inclusions to form freestanding islands. Finally, the freestanding semiconductor “islands” are removed from the surface of the polycrystalline semiconductor layer by a lift-off process.

摘要翻译： 本发明提供了在异物的支撑基板上形成多晶半导体膜的方法。 该方法包括在衬底上沉积金属膜，在金属的衬底上形成金属氧化物和/或氢氧化物的膜，并在金属氧化物和/或氢氧化物膜的表面上形成非晶半导体材料层。 然后将整个样品加热到半导体层被吸收到金属层中并通过金属诱导结晶作为多晶层沉积到靶表面上的温度。 留下金属作为覆盖沉积的多晶层的覆盖层，在金属层中具有半导体夹杂物。 多晶半导体膜和覆盖层由多孔界面金属氧化物nd /或氢氧化物膜产生。 然后用蚀刻去除覆盖层中的金属和界面金属氧化物和/或氢氧化物膜，该蚀刻不影响半导体夹杂物以形成独立的岛。 最后，通过剥离工艺从多晶半导体层的表面去除独立的半导体“岛”。