公开(公告)号：US06759260B2

公开(公告)日：2004-07-06

申请号：US10421986

申请日：2003-04-23

申请人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

发明人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

IPC分类号： H01L2166

CPC分类号： H01L21/67248 ,  H01L21/67098

摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.

摘要翻译： 一种用于监测加热室中温度范围为200至600℃的温度和温度分布的方法和相关结构，其中加热室可用于制造半导体器件。 铜层沉积在半导体晶片的表面上。 接下来，将晶片在环境氧气氛中加热到200-600℃的温度。晶片的加热使生成氧化物层的铜层的一部分氧化。 加热后，去除晶片，并在晶片表面上的点测量薄层电阻。 由于局部薄层电阻是氧化物层的局部厚度的函数，所以晶片表面上的薄层电阻的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。 测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。 此外，可以通过在氢环境环境中加热监测器来重新使用监视器以重新使用以将氧化物层转化为未氧化的铜。 此外，氧化物层具有作为氧化物层厚度的函数的颜色，其中可以使用颜色来估计晶片在环境氧气氛中被加热的温度。

公开(公告)号：US06580140B1

公开(公告)日：2003-06-17

申请号：US09665584

申请日：2000-09-18

申请人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

发明人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

IPC分类号： H01L31058

CPC分类号： H01L21/67248 ,  H01L21/67098

摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.