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58 条记录 (耗时 0.201 秒)

    Metal oxide temperature monitor
    1.
    发明授权
    Metal oxide temperature monitor 失效
    金属氧化物温度监测仪

    公开(公告)号：US06759260B2

    公开(公告)日：2004-07-06

    申请号：US10421986

    申请日：2003-04-23

    申请人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

    发明人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

    IPC分类号： H01L2166

    CPC分类号： H01L21/67248 ,  H01L21/67098

    摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.

    摘要翻译： 一种用于监测加热室中温度范围为200至600℃的温度和温度分布的方法和相关结构，其中加热室可用于制造半导体器件。 铜层沉积在半导体晶片的表面上。 接下来，将晶片在环境氧气氛中加热到200-600℃的温度。晶片的加热使生成氧化物层的铜层的一部分氧化。 加热后，去除晶片，并在晶片表面上的点测量薄层电阻。 由于局部薄层电阻是氧化物层的局部厚度的函数，所以晶片表面上的薄层电阻的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。 测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。 此外，可以通过在氢环境环境中加热监测器来重新使用监视器以重新使用以将氧化物层转化为未氧化的铜。 此外，氧化物层具有作为氧化物层厚度的函数的颜色，其中可以使用颜色来估计晶片在环境氧气氛中被加热的温度。

    Metal oxide temperature monitor
    2.
    发明授权
    Metal oxide temperature monitor 失效

    公开(公告)号：US06580140B1

    公开(公告)日：2003-06-17

    申请号：US09665584

    申请日：2000-09-18

    申请人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

    发明人： Arne W. Ballantine ,  Edward C. Cooney, III ,  Jeffrey D. Gilbert ,  Robert G. Miller ,  Amy L. Myrick ,  Ronald A. Warren

    IPC分类号： H01L31058

    CPC分类号： H01L21/67248 ,  H01L21/67098

    摘要： A method, and associated structure, for monitoring temperature and temperature distributions in a heating chamber for a temperature range of 200 to 600° C., wherein the heating chamber may be used in the fabrication of a semiconductor device. A copper layer is deposited over a surface of a semiconductor wafer. Next, the wafer is heated in an ambient oxygen atmosphere to a temperature in the range of 200-600° C. The heating of the wafer oxidizes a portion of the copper layer, which generates an oxide layer. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the oxide layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface. In addition, the monitor may be reconditioned for repeated use by heating the monitor in a hydrogen ambient environment to convert the oxide layer to unoxidized copper. Additionally, the oxide layer has a color that is a function of the oxide layer thickness, where the color may be used to estimate the temperature at which the wafer was heated in the ambient oxygen atmosphere.

    Sacrificial metal spacer damascene process
    7.
    发明授权
    Sacrificial metal spacer damascene process 有权
    牺牲金属间隔镶嵌工艺

    公开(公告)号：US07393777B2

    公开(公告)日：2008-07-01

    申请号：US10984439

    申请日：2004-11-09

    申请人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    发明人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    IPC分类号： H01L21/4763 ,  H01L21/311

    CPC分类号： H01L21/76844 ,  H01L21/76811 ,  H01L21/76813

    摘要： A method and structure for a dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulator stack, forming troughs in the hardmask, creating sacrificial tungsten sidewall spacers in the troughs, patterning the laminated insulator stack, removing the sacrificial sidewall spacers, forming vias in the patterned laminated insulator stack, and depositing a metal liner and conductive material into the vias and troughs, wherein the laminated insulator stack comprises a dielectric layer further comprising oxide and polyarylene. The step of depositing prevents the laminated insulator stack from sputtering into the vias. Moreover, the step of depositing comprises cleaning the vias and troughs, optionally performing a reactive ion etching or argon sputter cleaning, depositing a plurality of metal layers over the vias and troughs, and depositing copper in the vias and troughs.

    摘要翻译： 用于双镶嵌互连结构的方法和结构包括在衬底上的金属化层中形成布线，在金属化层上方形成叠层绝缘体堆叠，在叠层绝缘体堆叠上形成硬掩模，在硬掩模中形成槽，从而产生牺牲钨 在槽中的侧壁间隔物，图案化叠层绝缘体堆叠，去除牺牲侧壁间隔物，在图案化的层压绝缘体堆叠中形成通孔，以及将金属衬垫和导电材料沉积到通孔和槽中，其中层压绝缘体堆叠包括介电层 还包含氧化物和聚亚芳基。 沉积步骤防止层压的绝缘体叠层溅射到通孔中。 此外，沉积步骤包括清洁通孔和槽，可选地执行反应离子蚀刻或氩溅射清洗，在通孔和槽上沉积多个金属层，以及在通孔和槽中沉积铜。

    Sacrificial metal spacer damascene process
    8.
    发明授权
    Sacrificial metal spacer damascene process 失效
    牺牲金属间隔镶嵌工艺

    公开(公告)号：US06846741B2

    公开(公告)日：2005-01-25

    申请号：US10202134

    申请日：2002-07-24

    申请人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    发明人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    IPC分类号： H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76844 ,  H01L21/76811 ,  H01L21/76813

    摘要： A method and structure for a dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulator stack, forming troughs in the hardmask, creating sacrificial tungsten sidewall spacers in the troughs, patterning the laminated insulator stack, removing the sacrificial sidewall spacers, forming vias in the patterned laminated insulator stack, and depositing a metal liner and conductive material into the vias and troughs, wherein the laminated insulator stack comprises a dielectric layer further comprising oxide and polyarylene. The step of depositing prevents the laminated insulator stack from sputtering into the vias. Moreover, the step of depositing comprises cleaning the vias and troughs, optionally performing a reactive ion etching or argon sputter cleaning, depositing a plurality of metal layers over the vias and troughs, and depositing copper in the vias and troughs.

    摘要翻译： 用于双镶嵌互连结构的方法和结构包括在衬底上的金属化层中形成布线，在金属化层上方形成叠层绝缘体堆叠，在叠层绝缘体堆叠上形成硬掩模，在硬掩模中形成槽，从而产生牺牲钨 在槽中的侧壁间隔物，图案化叠层绝缘体堆叠，去除牺牲侧壁间隔物，在图案化的层压绝缘体堆叠中形成通孔，以及将金属衬垫和导电材料沉积到通孔和槽中，其中层压绝缘体堆叠包括介电层 还包含氧化物和聚亚芳基。 沉积步骤防止层压的绝缘体叠层溅射到通孔中。 此外，沉积步骤包括清洁通孔和槽，可选地执行反应离子蚀刻或氩溅射清洗，在通孔和槽上沉积多个金属层，以及在通孔和槽中沉积铜。