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63 条记录 (耗时 0.022 秒)

    Exposed pore sealing post patterning
    5.
    发明授权
    Exposed pore sealing post patterning 有权
    曝露孔密封柱图案化

    公开(公告)号：US07541679B2

    公开(公告)日：2009-06-02

    申请号：US11247818

    申请日：2005-10-11

    申请人： Edward C Cooney, III ,  John A Fitzsimmons ,  Jeffrey P Gambino ,  Stephen E Luce ,  Thomas L McDevitt ,  Lee M Nicholson ,  Anthony K Stamper

    发明人： Edward C Cooney, III ,  John A Fitzsimmons ,  Jeffrey P Gambino ,  Stephen E Luce ,  Thomas L McDevitt ,  Lee M Nicholson ,  Anthony K Stamper

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76831 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76868

    摘要： Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant is absorbed or retained in exposed pores in the patterned dielectric layer and then a second reactant is introduced into openings such that it enters the exposed-pores, while first reactant molecules are simultaneously being outgassed. The second reactant reacts in-situ with the outgassed first reactant molecules at a mouth region of the exposed pores to form the pore-closing layer across the mouth region of exposed pores, while retaining a portion of each pore's porosity to maintain characteristics and properties of the porous low-k dielectric layer. Optionally, the first reactant may be adsorbed onto the low-k dielectric such that upon introduction of the second reactant Into the patterned dielectric openings, a reactive liner is also formed on the low-k dielectric.

    摘要翻译： 具有闭孔层的方法和结构，用于封闭图案化的多孔低k电介质层中的暴露孔，以及可选地在低k电介质上的反应性衬垫。 第一反应物被吸收或保留在图案化介电层中的暴露孔中，然后将第二反应物引入开口中，使得其进入暴露的孔，同时第一反应物分子同时脱气。 第二反应物与暴露孔的口部区域处的脱气的第一反应物分子原位反应，以形成穿过暴露孔的口部区域的孔闭合层，同时保留每个孔隙的一部分以保持其孔的特性和性质 多孔低k电介质层。 任选地，第一反应物可以被吸附到低k电介质上，使得当将第二反应物引入到图案化的电介质开口中时，还在低k电介质上形成反应性衬垫。

    Sacrificial metal spacer damascene process
    6.
    发明授权
    Sacrificial metal spacer damascene process 有权
    牺牲金属间隔镶嵌工艺

    公开(公告)号：US07393777B2

    公开(公告)日：2008-07-01

    申请号：US10984439

    申请日：2004-11-09

    申请人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    发明人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    IPC分类号： H01L21/4763 ,  H01L21/311

    CPC分类号： H01L21/76844 ,  H01L21/76811 ,  H01L21/76813

    摘要： A method and structure for a dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulator stack, forming troughs in the hardmask, creating sacrificial tungsten sidewall spacers in the troughs, patterning the laminated insulator stack, removing the sacrificial sidewall spacers, forming vias in the patterned laminated insulator stack, and depositing a metal liner and conductive material into the vias and troughs, wherein the laminated insulator stack comprises a dielectric layer further comprising oxide and polyarylene. The step of depositing prevents the laminated insulator stack from sputtering into the vias. Moreover, the step of depositing comprises cleaning the vias and troughs, optionally performing a reactive ion etching or argon sputter cleaning, depositing a plurality of metal layers over the vias and troughs, and depositing copper in the vias and troughs.

    摘要翻译： 用于双镶嵌互连结构的方法和结构包括在衬底上的金属化层中形成布线，在金属化层上方形成叠层绝缘体堆叠，在叠层绝缘体堆叠上形成硬掩模，在硬掩模中形成槽，从而产生牺牲钨 在槽中的侧壁间隔物，图案化叠层绝缘体堆叠，去除牺牲侧壁间隔物，在图案化的层压绝缘体堆叠中形成通孔，以及将金属衬垫和导电材料沉积到通孔和槽中，其中层压绝缘体堆叠包括介电层 还包含氧化物和聚亚芳基。 沉积步骤防止层压的绝缘体叠层溅射到通孔中。 此外，沉积步骤包括清洁通孔和槽，可选地执行反应离子蚀刻或氩溅射清洗，在通孔和槽上沉积多个金属层，以及在通孔和槽中沉积铜。

    Sacrificial metal spacer damascene process
    7.
    发明授权
    Sacrificial metal spacer damascene process 失效
    牺牲金属间隔镶嵌工艺

    公开(公告)号：US06846741B2

    公开(公告)日：2005-01-25

    申请号：US10202134

    申请日：2002-07-24

    申请人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    发明人： Edward C. Cooney, III ,  Robert M. Geffken ,  Anthony K. Stamper

    IPC分类号： H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76844 ,  H01L21/76811 ,  H01L21/76813

    摘要： A method and structure for a dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulator stack, forming troughs in the hardmask, creating sacrificial tungsten sidewall spacers in the troughs, patterning the laminated insulator stack, removing the sacrificial sidewall spacers, forming vias in the patterned laminated insulator stack, and depositing a metal liner and conductive material into the vias and troughs, wherein the laminated insulator stack comprises a dielectric layer further comprising oxide and polyarylene. The step of depositing prevents the laminated insulator stack from sputtering into the vias. Moreover, the step of depositing comprises cleaning the vias and troughs, optionally performing a reactive ion etching or argon sputter cleaning, depositing a plurality of metal layers over the vias and troughs, and depositing copper in the vias and troughs.

    摘要翻译： 用于双镶嵌互连结构的方法和结构包括在衬底上的金属化层中形成布线，在金属化层上方形成叠层绝缘体堆叠，在叠层绝缘体堆叠上形成硬掩模，在硬掩模中形成槽，从而产生牺牲钨 在槽中的侧壁间隔物，图案化叠层绝缘体堆叠，去除牺牲侧壁间隔物，在图案化的层压绝缘体堆叠中形成通孔，以及将金属衬垫和导电材料沉积到通孔和槽中，其中层压绝缘体堆叠包括介电层 还包含氧化物和聚亚芳基。 沉积步骤防止层压的绝缘体叠层溅射到通孔中。 此外，沉积步骤包括清洁通孔和槽，可选地执行反应离子蚀刻或氩溅射清洗，在通孔和槽上沉积多个金属层，以及在通孔和槽中沉积铜。