公开(公告)号：US5656859A

公开(公告)日：1997-08-12

申请号：US622589

申请日：1996-03-26

申请人： Atsushi Murakoshi ,  Masao Iwase ,  Kyoichi Suguro ,  Mitsuo Koike ,  Tadayuki Asaishi

发明人： Atsushi Murakoshi ,  Masao Iwase ,  Kyoichi Suguro ,  Mitsuo Koike ,  Tadayuki Asaishi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/456 ,  H01L21/28512

摘要： An impurity diffusion surface layer is formed in a surface of a silicon substrate, and an aluminum electrode is arranged in direct contact with the impurity diffusion layer. The surface layer contains Ge as an impurity serving to change the lattice constant in a concentration of at least 1.times.10.sup.21 cm.sup.-1 under a thermal non-equilibrium state. The lattice constant of the surface layer is set higher than that of silicon containing the same concentration of germanium under a thermal equilibrium state. As a result, it is possible to decrease the Schittky barrier height at the contact between the surface layer and the electrode. The surface layer also contains an electrically active boron as an impurity serving to impart carriers in a concentration higher than the critical concentration of solid solution in silicon under a thermal equilibrium state. The presence of Ge permits the carrier mobility within the surface layer higher than that within silicon.

摘要翻译： 在硅衬底的表面上形成杂质扩散表面层，并且铝电极被布置成与杂质扩散层直接接触。 表面层含有Ge作为杂质，用于在热非平衡状态下以至少1×10 21 cm -1的浓度改变晶格常数。 在热平衡状态下，表面层的晶格常数被设定为高于含有相同浓度的锗的硅的晶格常数。 结果，可以降低表面层和电极之间的接触处的Schittky势垒高度。 表面层还含有作为杂质的电活性硼，其用于赋予在热平衡状态下高于硅中的固溶体的临界浓度的载流子。 Ge的存在允许表面层内的载流子迁移率高于硅内的载流子迁移率。

公开(公告)号：US5770512A

公开(公告)日：1998-06-23

申请号：US841575

申请日：1997-04-30

申请人： Atsushi Murakoshi ,  Masao Iwase ,  Kyoichi Suguro ,  Mitsuo Koike ,  Tadayuki Asaishi

发明人： Atsushi Murakoshi ,  Masao Iwase ,  Kyoichi Suguro ,  Mitsuo Koike ,  Tadayuki Asaishi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L21/265 ,  H01L21/44

CPC分类号： H01L29/456 ,  H01L21/28512

摘要： An impurity diffusion surface layer is formed in a surface of a silicon substrate, and an aluminum electrode is arranged in direct contact with the impurity diffusion layer. The surface layer contains Ge as an impurity serving to change the lattice constant in a concentration of at least 1.times.10.sup.21 cm.sup.-3 under a thermal non-equilibrium state. The lattice constant of the surface layer is set higher than that of silicon containing the same concentration of germanium under a thermal equilibrium state. As a result, it is possible to decrease the Schittky barrier height at the contact between the surface layer and the electrode. The surface layer also contains an electrically active boron as an impurity serving to impart carriers in a concentration higher than the critical concentration of solid solution in silicon under a thermal equilibrium state. The presence of Ge permits the carrier mobility within the surface layer higher than that within silicon.

摘要翻译： 在硅衬底的表面上形成杂质扩散表面层，并且铝电极被布置成与杂质扩散层直接接触。 表面层含有作为杂质的Ge，用于在热非平衡状态下以至少1×10 21 cm -3的浓度改变晶格常数。 在热平衡状态下，表面层的晶格常数被设定为高于含有相同浓度的锗的硅的晶格常数。 结果，可以降低表面层和电极之间的接触处的Schittky势垒高度。 表面层还含有作为杂质的电活性硼，其用于赋予在热平衡状态下高于硅中的固溶体的临界浓度的载流子。 Ge的存在允许表面层内的载流子迁移率高于硅内的载流子迁移率。

公开(公告)号：US5767521A

公开(公告)日：1998-06-16

申请号：US528409

申请日：1995-09-14

申请人： Shiro Takeno ,  Shigeru Kanbayashi ,  Mitsuo Koike ,  Seizo Doi ,  Iwao Higashikawa

发明人： Shiro Takeno ,  Shigeru Kanbayashi ,  Mitsuo Koike ,  Seizo Doi ,  Iwao Higashikawa

IPC分类号： G03F7/20 ,  B82B1/00 ,  H01J37/317 ,  H01L21/027 ,  H01J37/04

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.

摘要翻译： 公开了采用“电子全息术”技术的电子束光刻系统。 该系统至少包括：成形孔，用于使从电子束源发射的电子束成形为具有特定光束形状; 用于衍射通过该成形孔的电子束的至少两个单晶薄膜; 用于分别聚焦通过这些单晶薄膜的入射电子束和由这些单晶薄膜衍射的衍射电子束的聚焦装置; 以及用于仅选择期望的衍射电子束的选择孔径。 透射的入射电子束干涉衍射电子束，由此在涂覆在半导体衬底或掩模板上的抗蚀剂表面上形成具有期望的纳米级间距的条纹图案。

公开(公告)号：US4044546A

公开(公告)日：1977-08-30

申请号：US713227

申请日：1976-08-10

申请人： Mitsuo Koike

发明人： Mitsuo Koike

IPC分类号： G04G9/00 ,  G04G9/12 ,  G04B19/34

CPC分类号： G04G9/0047 ,  G04G9/0029 ,  G04G9/126

摘要： Instead of having separate digital display means for seconds, minutes, hours, dates and months, an electronic timepiece uses the same liquid crystal display and differentiates between seconds, minutes, hours, dates and months by displaying each in a different color. This makes it possible to have the timepiece smaller and at the same time have the individual digits of the display larger and hence more easily legible. The different colors of the display are obtained by using a plurality of driving voltages for the liquid crystal display device and switching circuitry for applying the different drive voltages to the liquid crystal device according to whether seconds, minutes, hours, dates or months is to be displayed.

摘要翻译： 电子表不是具有分秒，分，小时，日期和月份的单独的数字显示装置，而是使用相同的液晶显示器，并且以不同的颜色显示每秒钟，分钟，小时，日期和月份。 这使得可以使钟表更小并且同时具有显示器的个体数字更大并且因此更易于清晰。 显示器的不同颜色通过使用用于液晶显示装置的多个驱动电压和用于根据是否将秒，分，小时，日期或月份应用到液晶装置的不同驱动电压的开关电路来获得 显示。