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1.
公开(公告)号:US20240035148A1
公开(公告)日:2024-02-01
申请号:US18361024
申请日:2023-07-28
Applicant: Axcelis Technologies, Inc.
Inventor: Neil Colvin , David Sporleder , Udo H. Verkerk , Atul Gupta , Edward Moore
IPC: C23C14/48 , H01J37/317 , C23C14/14
CPC classification number: C23C14/48 , H01J37/3171 , C23C14/14
Abstract: An ion implantation system, ion source, and method are provided for forming an aluminum ion beam from an aluminum-containing species to an ion source. One or more of a halide species and a halide molecule are introduced to the ion source, where the halide species is selected from a group consisting of atomic chlorine, atomic bromine, and atomic iodine, and the halide molecule comprises a halide selected from a group consisting of chlorine, bromine, and iodine. The one or more of the halide species and the halide molecule clean one or more components of the ion source and further react with the aluminum-containing species to generate an aluminum-halide vapor. The aluminum ion beam is further formed from at least the aluminum-halide vapor.
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2.
公开(公告)号:US20230352265A1
公开(公告)日:2023-11-02
申请号:US18345618
申请日:2023-06-30
Applicant: Axcelis Technologies, Inc.
Inventor: Neil K. Colvin , Neil Bassom , Edward Moore
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/05
Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
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公开(公告)号:US12051561B2
公开(公告)日:2024-07-30
申请号:US18345618
申请日:2023-06-30
Applicant: Axcelis Technologies, Inc.
Inventor: Neil K. Colvin , Neil Bassom , Edward Moore
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/05
Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
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公开(公告)号:US11699565B2
公开(公告)日:2023-07-11
申请号:US17514302
申请日:2021-10-29
Applicant: Axcelis Technologies, Inc.
Inventor: Neil K. Colvin , Neil Bassom , Edward Moore
IPC: H01J37/08 , H01J37/317
CPC classification number: H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/05
Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
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