公开(公告)号：US20180346342A1

公开(公告)日：2018-12-06

申请号：US15995707

申请日：2018-06-01

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh ,  Neil Basson

IPC: C01F7/48 ,  C01B7/13 ,  C23C16/12 ,  C23C14/48 ,  C23C16/448 ,  H01J37/317 ,  H01L21/02 ,  H01L21/265 ,  H01J37/08 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.

公开(公告)号：US10676370B2

公开(公告)日：2020-06-09

申请号：US15995707

申请日：2018-06-01

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh ,  Neil Basson

IPC: C01F7/48 ,  C23C16/12 ,  H01J37/317 ,  C01B7/13 ,  C23C14/48 ,  C23C16/448 ,  H01L21/02 ,  H01L21/265 ,  H01J37/08 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.