公开(公告)号：US20160175804A1

公开(公告)日：2016-06-23

申请号：US14576549

申请日：2014-12-19

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee ,  William DiVergilio ,  Daniel R. Tieger

IPC: B01J19/12 ,  H01J37/08 ,  C01B35/02 ,  H01J37/317

CPC classification number: C01B35/026 ,  B01J19/121 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/2001

Abstract: Systems and methods for the production of laser induced high mass molecular borane is disclosed for an ion implantation system. The system comprises a laser, a diborane gas source, a heated interaction chamber for generating a high mass molecular borane, a transport system for transferring the high mass molecular borane, and an ion source chamber for generating an ion beam in an ion beam path for implantation of a workpiece. The transport system comprises at least a first and a second flow control component at least a first heated chamber, wherein the first heated chamber is disposed between the first and second flow control components, and wherein the first heated chamber is configured to condense the high mass molecular borane. The laser comprises a CO2 laser configured to irradiate the diborane source gas at a wavelength of about 10.6 μm at a R-16 (973 cm−1) line of excitation.

Abstract translation: 公开了用于离子注入系统的用于生产激光诱导的高质量分子量硼烷的系统和方法。 该系统包括激光器，乙硼烷气体源，用于产生高质量分子量硼烷的加热相互作用室，用于转移高质量分子量硼烷的输送系统和用于在离子束路径中产生离子束的离子源室， 植入工件。 输送系统至少包括第一和第二流量控制部件至少第一加热室，其中第一加热室设置在第一和第二流量控制部件之间，并且其中第一加热室被配置为冷凝高质量 分子硼烷。 激光器包括配置成在R-16（973cm-1）激发线处照射约10.6μm波长的乙硼烷源气体的CO 2激光器。