公开(公告)号：US5339326A

公开(公告)日：1994-08-16

申请号：US112978

申请日：1993-08-30

申请人： Ayumu Tsujimura ,  Kazuhiro Ohkawa ,  Yoshii Shigeo ,  Tsuneo Mitsuyu

发明人： Ayumu Tsujimura ,  Kazuhiro Ohkawa ,  Yoshii Shigeo ,  Tsuneo Mitsuyu

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/028

摘要： The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.

摘要翻译： 本发明提供一种用于在从近红外区到可见光短波长区域的区域中振荡的半导体器件的反射器，以及制造反射器的方法。 使用RF磁控溅射装置，在ZnSe半导体激光装置的端面上形成沉积膜的电介质反射体。 沉积膜通过3次重复交替沉积SiO 2膜和TiO 2膜形成，每个SiO 2膜和TiO 2膜的半导体激光器件的振荡波长的光学厚度为四分之一，使得激光器件的振荡波长的反射率超过 90％。 与没有介质反射器的常规半导体激光器件相比，介质反射器改善了激光器件的电流 - 光输出特性。