公开(公告)号：US06611005B2

公开(公告)日：2003-08-26

申请号：US09796702

申请日：2001-03-02

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2912

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法，在依靠金属有机气相外延技术在反应室内设置的基座上保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06265287B1

公开(公告)日：2001-07-24

申请号：US09179935

申请日：1998-10-28

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法根据金属有机气相外延技术，在设置在反应室中的基座保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US07160748B2

公开(公告)日：2007-01-09

申请号：US11063533

申请日：2005-02-24

申请人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

发明人： Akihiko Ishibashi ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Nobuyuki Otsuka ,  Gaku Sugahara ,  Ryoko Miyanaga ,  Toshitaka Shimamoto ,  Kenji Harafuji ,  Yuzaburo Ban ,  Kiyoshi Ohnaka

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/32 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

摘要翻译： 本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。 步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

公开(公告)号：US06940100B2

公开(公告)日：2005-09-06

申请号：US10335924

申请日：2003-01-03

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S5/34346

摘要： A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.

摘要翻译： III-V族化合物半导体的半导体发光元件包括量子阱层，该量子阱层形成在衬底上并且包括彼此交替堆叠的势垒层和阱层。 阱层的带隙比阻挡层的带隙窄。 阱层包含铟和氮，而阻挡层含有铝和氮。 在该结构中，在阻挡层中产生拉伸应变，因此能够降低在量子阱层中产生的压缩应变。 因此，可以增加产生凹坑的临界厚度。

公开(公告)号：US5499260A

公开(公告)日：1996-03-12

申请号：US282919

申请日：1994-07-29

申请人： Yasuhito Takahashi ,  Ayumu Tsujimura

发明人： Yasuhito Takahashi ,  Ayumu Tsujimura

IPC分类号： H01L33/10 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01S3/18

CPC分类号： H01S5/327 ,  H01S5/22 ,  H01S2304/04 ,  H01S5/2214 ,  H01S5/2227 ,  H01S5/2231

摘要： An n-ZnMgSSe lower cladding layer, an n-ZnSSe light guiding layer, an undopad CdZnSe active layer, a p-ZnSSe light guiding layer, a p-ZnMgSSe upper cladding layer, and a p-ZnSe cap layer are successively formed on an n-GaAs substrate. Then, grooves and a ridge are formed in the respective p-type layers by etching. A current blocking layer formed by laminating SiO.sub.2 layers and TiO.sub.2 layers in multiple layers is formed so as to bury the grooves. On the top surface of the ridge where the current blocking layer is not formed, an upper electrode is formed. On the bottom surface of the n-GaAs substrate, a lower electrode is formed, and thus the ridge type semiconductor laser is fabricated. This semiconductor laser is capable of emitting blue light with an oscillating wavelength of around 500 nm. The current blocking layer of the lamination of the SiO.sub.2 and TiO.sub.2 layers allows effective confinement of both light and carriers and a drastic decrease in the threshold current for a laser oscillation.

摘要翻译： 在n-ZnMgSSe下包层，n-ZnSSe导光层，未掺杂的CdZnSe有源层，p-ZnSSe导光层，p-ZnMgSSe上包层和p-ZnSe覆盖层上依次形成 n-GaAs衬底。 然后，通过蚀刻在各个p型层中形成沟槽和脊。 形成通过层叠多层SiO 2层和TiO 2层而形成的电流阻挡层，以便掩埋沟槽。 在没有形成电流阻挡层的脊的顶表面上形成上电极。 在n-GaAs衬底的底表面上形成下电极，由此制造脊型半导体激光器。 该半导体激光器能够发射具有约500nm的振荡波长的蓝光。 SiO 2和TiO 2层的层压的电流阻挡层允许光和载流子的有效约束，并且激光振荡的阈值电流急剧下降。

公开(公告)号：US06720586B1

公开(公告)日：2004-04-13

申请号：US09712127

申请日：2000-11-15

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w ≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z <= 1和x + y + z = 1，通过使用对应于 从掩模膜暴露的凸起的顶面。