公开(公告)号：US10440298B2

公开(公告)日：2019-10-08

申请号：US15390206

申请日：2016-12-23

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： R Daniel McGrath

IPC: H04N5/357 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

Abstract: An extended range Compatible Metal Oxide Semiconductor Image Sensor and method for operating it is provided, the sensor comprising: a first conversion node; a first switch connected to said first conversion node; a second switch disposed in series with said first switch; and a capacitive element disposed between said first and said second switches.

公开(公告)号：US10225498B2

公开(公告)日：2019-03-05

申请号：US15596022

申请日：2017-05-16

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： James A Stobie ,  R Daniel McGrath

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N5/232 ,  H04N5/33 ,  G02B3/00

Abstract: An image sensor suitable for low light level imaging, the image sensor having a plurality of pixels, each pixel having nMOS and pMOS components, provides a lower noise threshold as compared to prior art single-flavor pixels.

公开(公告)号：US20180184021A1

公开(公告)日：2018-06-28

申请号：US15390206

申请日：2016-12-23

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： R Daniel McGrath

IPC: H04N5/357 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378

CPC classification number: H04N5/3575 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/37452 ,  H04N5/378

Abstract: An extended range Compatible Metal Oxide Semiconductor Image Sensor and method for operating it is provided, the sensor comprising: a first conversion node; a first switch connected to said first conversion node; a second switch disposed in series with said first switch; and a capacitive element disposed between said first and said second switches.