公开(公告)号：US20220220421A1

公开(公告)日：2022-07-14

申请号：US17613337

申请日：2020-05-20

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus Hoogboom ,  Andreas Klipp ,  Jhih Jheng Ke ,  Che Wei Wang ,  Chia Ching Ting

IPC: C11D7/32 ,  C11D3/34 ,  C11D3/28 ,  C11D3/00 ,  C11D11/00 ,  H01L21/02 ,  C09K13/00

Abstract: Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.