Zinc oxide crystal growth method
    1.
    发明授权
    Zinc oxide crystal growth method 失效
    氧化锌晶体生长方法

    公开(公告)号:US3043671A

    公开(公告)日:1962-07-10

    申请号:US2064360

    申请日:1960-04-07

    Inventor: NIELSEN JAMES W

    CPC classification number: H01L41/39 C30B9/00 C30B9/12 C30B29/16

    Abstract: Hexagonal plate-like zinc oxide crystals are grown by dissolving zinc oxide in a solvent consisting substantially wholly of lead fluoride by heating to a temperature within the range 1030 DEG to 1300 DEG C., the amount of zinc oxide introduced being sufficient to produce saturation of the lead fluoride at a temperature within said range, and cooling the resultant solution to cause growth of the crystals, cooling of the solution within the range 1300 DEG to 1030 DEG C. being at a maximum rate of 5 degrees per hour. Baths containing 1% or greater of impurities such as iron, cobalt, nickel, manganese, copper or lithium, do not affect the crystal habit, but antimony, bismuth and arsenic should be avoided. The amounts of zinc oxide and lead fluoride to be used are dependent upon the desired temperature of initial nucleation; from the graph the maximum amounts of zinc oxide tolerable for given maximum temperatures can be obtained. The preferred flux composition corresponds with saturation over the range 1030 DEG to 1300 DEG C. (from 21 to 48 mol. per cent zinc oxide based on the entire bath). The initial ingredients, i.e. ZnO and PbF2, are placed in a crucible which is then covered and heated in a furnace to the desired temperature in the range 1030 DEG to 1300 DEG C., a partially sealed system being used. The contents are allowed to cool at a maximum rate of 5 DEG C. per hour until a temperature of 1030 DEG C. is reached when the entire flux is quenched by removing the crucible from the furnace and allowing the contents to cool to room temperature. Alternatively, on termination of crystallization at 1030 DEG C., the liquid flux may be removed by pouring. Specification 959,293 is referred to.

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