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公开(公告)号:US20250013147A1
公开(公告)日:2025-01-09
申请号:US18277589
申请日:2022-03-18
Abstract: The disclosure provides a quantum dot mixture, a quantum dot light emitting layer and a preparation method thereof, relates to the field of display technology. The preparation method of quantum dot light emitting layer includes: providing a substrate; forming a quantum dot film layer on one side of the substrate, which comprises a first quantum dot body-first ligand and a second quantum dot body-second ligand; exposing a predetermined region of the substrate to form a cross-linkage or a salt insoluble in the developer via a reaction between the first ligand and the second ligand in the predetermined region of the quantum dot film layer; and developing to remove the quantum dot film layer in the non-predetermined region of the substrate, and obtain the quantum dot light emitting layer. The disclosure provides a basis for the formation of the quantum dot light emitting layer using photolithography technology.
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公开(公告)号:US20210325751A1
公开(公告)日:2021-10-21
申请号:US16611647
申请日:2019-01-03
Inventor: Di ZHANG
IPC: G02F1/1362 , H01L27/12 , G02F1/1335 , G02F1/1333
Abstract: The present application discloses a display panel, a method for manufacturing a display panel, and a display device. The display panel includes a first substrate and a second substrate opposite the first substrate, a patterned black matrix layer between the first substrate and the second substrate, where the patterned black matrix layer includes a hollow area, and an array of signal lines on a side of the first substrate adjacent to the second substrate. The array of signal lines includes a feedback signal line for common electrode and a clock signal line. The display panel is divided into a display region in a center of the display panel and a frame region surrounding the display region. An orthographic projection of at least one of the first region and the second region on the first substrate at least partially overlaps an orthographic projection of the hollow area on the first substrate.
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公开(公告)号:US20250017033A1
公开(公告)日:2025-01-09
申请号:US18278674
申请日:2022-05-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H10K50/115 , B82Y20/00 , B82Y40/00 , C09K11/02 , H10K50/16 , H10K71/15 , H10K71/40 , H10K85/30 , H10K102/00
Abstract: A quantum dots light-emitting device and a manufacturing method thereof are provided, which includes: an electron transport layer, an auxiliary layer, and a quantum dot light-emitting layer sequentially stacked, the quantum dot light-emitting layer includes quantum dots, surfaces of the quantum dots are provided with a first ligand, the first ligand includes a first functional group connected to the quantum dots and a second functional group away from the quantum dots; surfaces of the quantum dots in contact with the first ligand have a compound formed by a metal element and a nonmetallic element, a material of the auxiliary layer includes at least one selected from a group consisting of a compound containing the second functional group, a compound containing the metal element, and a compound containing the nonmetallic element. The auxiliary layer firstly occupies a site where unnecessary quantum dots may remain.
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4.
公开(公告)号:US20210328060A1
公开(公告)日:2021-10-21
申请号:US16470412
申请日:2018-12-21
Inventor: Di ZHANG
IPC: H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L21/465 , H01L21/4763 , H01L29/66
Abstract: A thin film transistor, a manufacturing method thereof, an array substrate, and a display panel are provided. The thin film transistor includes a semiconductor layer, a source and a drain. The semiconductor layer includes an active layer and a superhydrophobic layer. The active layer includes a source contact, a drain contact and a channel portion. The source corresponds to the source contact, and the drain corresponds to the drain contact. The superhydrophobic layer is disposed on a surface of the active layer proximal to the source and the drain. The superhydrophobic layer includes a plurality of multi-level nanostructures protruding from the surface of the active layer, and the superhydrophobic layer at least covers a channel portion of the active layer.
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公开(公告)号:US20240381751A1
公开(公告)日:2024-11-14
申请号:US18249556
申请日:2022-04-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xu YUAN , Xiaoyuan ZHANG , Zhuo CHEN , Zhuo LI , Di ZHANG
IPC: H10K59/95 , H10K50/115 , H10K71/12 , H10K71/20 , H10K71/60
Abstract: A light-emitting substrate includes a substrate and a first light-emitting device. The first light-emitting device includes a first electrode, a first functional layer, a first light-emitting pattern and a second electrode that are sequentially disposed in a direction away from the substrate. The first functional layer is in contact with the first light-emitting pattern. The first light-emitting pattern includes a first light-emitting material. The first light-emitting material includes first light-emitting particles and first ligands combined with the first light-emitting particles. The first functional layer includes a first functional material. The first functional material includes first functional particles and second ligands combined with the first functional particles. A development characteristic of the first ligands is same as a development characteristic of the second ligands.
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公开(公告)号:US20240224559A1
公开(公告)日:2024-07-04
申请号:US17921087
申请日:2021-12-15
Inventor: Tieshi WANG , Zhuo CHEN , Zhuo LI , Xu YUAN , Di ZHANG
IPC: H10K50/115 , C09K11/06 , H10K59/35 , H10K71/15 , H10K85/10
CPC classification number: H10K50/115 , C09K11/06 , H10K59/35 , H10K71/15 , H10K85/141 , H10K85/151
Abstract: A light emitting device and a fabricating method thereof, and a light emitting apparatus. The light emitting device includes: a substrate, and an assisting layer and a quantum-dot layer that are provided in stack on one side of the substrate, and the assisting layer is close to the substrate; a material of the assisting layer includes a non-polar polymer; and the quantum-dot layer includes quantum dots and a first ligand material coordinated to the quantum dots, and a property of the first ligand material changes by an effect of illumination, so that a solubility of the quantum-dot layer in an organic solvent changes.
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7.
公开(公告)号:US20190245143A1
公开(公告)日:2019-08-08
申请号:US16159906
申请日:2018-10-15
Inventor: Di ZHANG
CPC classification number: H01L51/0005 , B41J2/12 , H01L27/3241
Abstract: A flow deflector, an inkjet printing method, an inkjet printing device, and a method for manufacturing a display substrate are provided. The flow deflector includes a plate-shaped body, and the plate-shaped body includes a first surface and a second surface opposite to each other, a plurality of through holes is arranged in the plate-shaped body, each of the plurality of through holes penetrates from the first surface to the second surface, and comprises a first opening formed on the first surface and a second opening formed on the second surface, and an opening area of the first opening is larger than an opening area of the second opening.
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