公开(公告)号：US20240243206A1

公开(公告)日：2024-07-18

申请号：US18686604

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Xiaolong Wang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/66742

Abstract: A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.

公开(公告)号：US20250142886A1

公开(公告)日：2025-05-01

申请号：US18686647

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Hengbo Zhang

IPC: H10D30/67 ,  H10D62/10 ,  H10D86/40

Abstract: A thin film transistor includes a substrate; and a semiconductor layer a gate, a source electrode and a drain electrode; which are arranged on the substrate. The semiconductor layer includes a first material layer and a second material layer which are stacked, wherein a material of the first material layer is selected from one of or a combination of first n-type metal oxide semiconductor materials, and a material of the second material layer is selected from one of or a combination of second n-type metal oxide semiconductor materials. A carrier mobility of a first n-type metal oxide semiconductor material is greater than or equal to 40 cm2/Vs, and a second n-type metal oxide semiconductor material is doped with Y, Y being selected from one of or a combination of rare earth elements. The first material layer is closer to the gate than the second material layer.