公开(公告)号：US11605739B2

公开(公告)日：2023-03-14

申请号：US16876344

申请日：2020-05-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong Wang ,  Tianmin Zhou ,  Hehe Hu ,  Shuilang Dong ,  Wenhua Wang ,  Nianqi Yao

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.