公开(公告)号：US09837542B2

公开(公告)日：2017-12-05

申请号：US15104504

申请日：2015-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Chunping Long ,  Yu-Cheng Chan ,  Xiaoyong Lu ,  Xialong Li

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/78633 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/26513 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

Abstract: A polycrystalline silicon thin-film transistor includes a substrate; an isolation layer formed on the substrate; and a polycrystalline silicon active layer formed on the substrate and the isolation layer, with two source-drain ion implantation regions being formed at both sides of the active layer, wherein the edges at both ends of the isolation layer are within the edges at both ends of the active layer. In the polycrystalline silicon thin-film transistor and the method for manufacturing the same, it is possible to increase the grain size of the active layer, improve the grain uniformity in a channel region thereof, effectively prevent deterioration of characteristics of the active layer caused by backlight irradiation, and improve the reliability of the device.