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1.发明申请公开(公告)号：US20190267409A1
公开(公告)日：2019-08-29
申请号：US16302850
申请日：2018-03-13
发明人： Hehe HU , Wei YANG , Xinhong LU , Ke WANG , Yu WEN
IPC分类号： H01L27/12 , H01L29/786 , H01L29/66
摘要： Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.
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公开(公告)号：US20200335559A1
公开(公告)日：2020-10-22
申请号：US16078560
申请日：2018-01-30
发明人： Rui XU , Haisheng WANG , Yingming LIU , Changfeng LI , Wei LIU , Qingrong REN , Yu WEN
摘要： A display array substrate, a manufacturing method and a display are disclosed herein. The display array substrate includes an array substrate base, an electroluminescent diode array substrate arranged above the array substrate base, including an anode layer, a cathode layer, an electroluminescent EL layer between the anode layer and the cathode layer, and a pixel compensation circuit layer on a side close to the array substrate base. The cathode layer is on a side away from the array substrate base. A photosensitive signal collector may be configured to receive an optical signal reflected by valleys and ridges of a finger and emitted by the electroluminescent EL layer, and convert the collected optical signal into an electrical signal to be output. The photosensitive signal collector may be arranged between the pixel compensation circuit layer and the anode layer of the electroluminescent diode array substrate.
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