ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230163145A1

    公开(公告)日:2023-05-25

    申请号:US16965495

    申请日:2019-07-22

    IPC分类号: H01L27/12

    CPC分类号: H01L27/1288 H01L27/1248

    摘要: Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.

    OLED DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20220255025A1

    公开(公告)日:2022-08-11

    申请号:US17732781

    申请日:2022-04-29

    IPC分类号: H01L51/00 H01L27/32

    摘要: The present disclosure relates to an OLED display panel and display device. The OLED display panel includes: a display area, a bending area and a bonding area for bonding a circuit board, wherein the display panel further includes: a base substrate; a first semiconductor pattern on the base substrate; a first insulating layer group on the first semiconductor pattern; a second semiconductor pattern on the first insulating layer group; a second insulating layer group on the second semiconductor pattern; first via holes in the first insulating layer group and the second insulating layer group; second via holes in the second insulating layer group, wherein the display panel further includes: a first groove located in the bending area and having a depth substantially identical to that of the first via holes; and a metal trace, connecting a trace in the display area to the circuit board.

    DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE HAVING THE SAME

    公开(公告)号:US20210135144A1

    公开(公告)日:2021-05-06

    申请号:US16956983

    申请日:2020-02-18

    发明人: Wenlin ZHANG Wei YANG

    IPC分类号: H01L51/50 H01L51/56

    摘要: The present disclosure relates to the field of display technology, and provides a display substrate, its manufacturing method, and a display device. The display substrate includes a display region and a GOA region. An active layer of a TFT at the GOA region at least includes a first oxide semiconductor layer and a second oxide semiconductor layer arranged on the first oxide semiconductor layer, and the first oxide semiconductor layer is arranged between the second oxide semiconductor layer and a base substrate of the display substrate and has a carrier mobility of smaller than the second oxide semiconductor layer.

    THIN-FILM TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20190267409A1

    公开(公告)日:2019-08-29

    申请号:US16302850

    申请日:2018-03-13

    摘要: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.

    ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY APPARATUS

    公开(公告)号:US20190243497A1

    公开(公告)日:2019-08-08

    申请号:US16319982

    申请日:2018-05-14

    IPC分类号: G06F3/041 H01L27/12

    摘要: Provided are an array substrate and preparation method therefor, and a display apparatus. The array substrate includes: a substrate, the substrate having a first TFT region, a touch control region and a second TFT region; a photosensitive PN junction, the photosensitive PN junction being provided in the touch control region; a first thin-film transistor, provided in the first TFT region, and electrically connected to the photosensitive PN junction; and a second thin-film transistor, provided in the second TFT region, and electrically connected to a pixel electrode.

    FINGERPRINT IDENTIFICATION SENSOR, FINGERPRINT IDENTIFICATION METHOD AND ELECTRONIC DEVICE

    公开(公告)号:US20190087624A1

    公开(公告)日:2019-03-21

    申请号:US15767704

    申请日:2017-09-30

    IPC分类号: G06K9/00

    CPC分类号: G06K9/0004 G06K9/00087

    摘要: A fingerprint identification sensor, a fingerprint identification method and an electronic device are disclosed. The fingerprint identification sensor includes a substrate; a fingerprint sensing element disposed on the substrate and including a thin film transistor, an off-state leakage current of the thin film transistor varying with the intensity of light irradiating onto an active area thereof; and a fingerprint identification light source arranged to emit light that irradiates onto a finger and is reflected thereby, the reflected light irradiating onto the active area of the thin film transistor. Thus, the fingerprint identification can be realized conveniently, and the fingerprint identification sensor has at least one of the advantages like high sensitivity and simple structure.

    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE, DISPLAY APPARATUS

    公开(公告)号:US20180374954A1

    公开(公告)日:2018-12-27

    申请号:US15737031

    申请日:2017-06-16

    摘要: The present disclosure provides a thin film transistor, a method for fabricating the same, a display substrate, and a display apparatus, and belongs to the field of display technology. The method includes: forming a metal oxide semiconductor pattern comprising first and second metal oxide semiconductor layers, the second metal oxide semiconductor layer being above the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; etching the source-drain metal layer and the second metal oxide semiconductor layer to form source and drain electrodes and an active layer of the thin film transistor. The active layer is obtained after removing the second metal oxide semiconductor layer between the source and drain electrodes using a first etchant, and the first etchant has a higher etching rate on the second metal oxide semiconductor layer than on the first metal oxide semiconductor layer.

    Display Substrate, Preparing Method Therefor, and Display Apparatus

    公开(公告)号:US20240276767A1

    公开(公告)日:2024-08-15

    申请号:US18022172

    申请日:2022-05-31

    IPC分类号: H10K59/121 H10K59/12

    CPC分类号: H10K59/1213 H10K59/1201

    摘要: The present disclosure provides a display substrate, a preparing method therefor, and a display apparatus, the display substrate includes: a base substrate and a driving circuit layer arranged on the base substrate, the driving circuit layer further includes at least one first via hole, the first via hole is located between the second sub-electrode and the first active layer, an orthographic projection of the first via hole is overlapped with an orthographic projection of the first sub-electrode and an orthographic projection of the first active layer on the base substrate respectively, the first via hole exposes at least a portion of the first sub-electrode and at least a portion of the first active layer respectively, the second sub-electrode is electrically connected with the exposed first sub-electrode through the first via hole, and the second sub-electrode is electrically connected with the exposed first active layer through the first via hole.