公开(公告)号：US20250113541A1

公开(公告)日：2025-04-03

申请号：US18291389

申请日：2022-08-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG ,  Liping LEI ,  Dongfang WANG ,  Zhengliang LI

IPC: H10D30/67 ,  H10D30/01

Abstract: An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.

公开(公告)号：US20250098225A1

公开(公告)日：2025-03-20

申请号：US18960308

申请日：2024-11-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20250098064A1

公开(公告)日：2025-03-20

申请号：US18552754

申请日：2022-10-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Kun ZHAO ,  Ce NING ,  Zhengliang LI ,  Zhanfeng CAO ,  Ke WANG ,  Jiaxiang ZHANG ,  Qi QI ,  Hehe HU ,  Feifei LI ,  Jie HUANG ,  Jiayu HE

IPC: H05K1/02 ,  G02F1/1335 ,  G02F1/13357 ,  H05K1/11 ,  H05K3/28

Abstract: A circuit board includes a substrate, a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer includes a plurality of first conductive portions. The second conductive layer includes a plurality of second conductive portions. A second conductive portion passes through a first via hole in the first insulating layer to be in electrical contact with a first conductive portion. The first conductive layer and the second conductive layer each include at least one main conductive layer, which is capable of creating a first intermetallic compound with solder. At least one of the first conductive layer and the second conductive layer further includes a stop layer capable of creating a second intermetallic compound with the solder. A rate of a reaction between the stop layer and the solder is lower than a rate of a reaction between the main conductive layer and the solder.

公开(公告)号：US20240234532A1

公开(公告)日：2024-07-11

申请号：US17925222

申请日：2021-12-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hehe HU ,  Dongfang WANG ,  Fengjuan LIU ,  Ce NING ,  Zhengliang LI ,  Jiayu HE ,  Yan QU ,  Kun ZHAO ,  Jie HUANG ,  Liping LEI ,  Yunsik IM ,  Shunhang ZHANG ,  Nianqi YAO ,  Feifei LI

IPC: H01L29/43 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/435 ,  H01L27/1214 ,  H01L29/41733 ,  H01L29/66742

Abstract: The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.

公开(公告)号：US20240097042A1

公开(公告)日：2024-03-21

申请号：US17781773

申请日：2021-06-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Nianqi YAO ,  Hehe HU ,  Liping LEI ,  Dongfang WANG ,  Dapeng XUE ,  Shuilang DONG ,  Zhengliang LI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

公开(公告)号：US20230178562A1

公开(公告)日：2023-06-08

申请号：US18103355

申请日：2023-01-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Shuilang DONG ,  Wenhua WANG ,  Nianqi YAO

IPC: H01L27/12

CPC classification number: H01L27/1225

Abstract: A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.

公开(公告)号：US20230036385A1

公开(公告)日：2023-02-02

申请号：US17772689

申请日：2021-06-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Xue LIU ,  Zhi WANG ,  Feng GUAN

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

公开(公告)号：US20240379631A1

公开(公告)日：2024-11-14

申请号：US18691021

申请日：2021-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Jin YANG ,  Ce NING ,  Jiayu HE ,  Jie HUANG ,  Hehe HU ,  Kun ZHAO ,  Feifei LI ,  Zhengliang LI ,  Guangcai YUAN

IPC: H01L27/12 ,  H01L25/16 ,  H01L33/62

Abstract: A light-emitting substrate and a display device are disclosed, the light-emitting substrate includes: a base substrate including a light-emitting region; a plurality of first pads on a side of the base substrate and in the light-emitting region, where a material of the first pads includes Cu; and an oxidation protection layer on a side of the first pads away from the base substrate, where the plurality of first pads is used for bonding connection with a plurality of light-emitting units through the oxidation protection layer, a material of the oxidation protection layer includes CuNiX, and X includes one or any combination of Al, Sn, Pb, Au, Ag, In, Zn, Bi, Mg, Ga, V, W, Y, Zr, Mo, Nb, Pt, Co or Sb.

公开(公告)号：US20240361628A1

公开(公告)日：2024-10-31

申请号：US18768052

申请日：2024-07-10

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Changhan HSIEH ,  Shipei LI ,  Jiayu HE ,  Xin GU ,  Ce NING ,  Zhengliang LI

IPC: G02F1/133 ,  G02F1/1335 ,  G06F1/16 ,  H10K30/88

CPC classification number: G02F1/13318 ,  G02F1/133509 ,  G06F1/1652 ,  H10K30/88

Abstract: A photodetection backplane, a liquid crystal display panel and a liquid crystal display apparatus are provided. The photodetection backplane includes: a base substrate; a first organic switching unit arranged at a side of the base substrate; and an organic photodetector arranged at a same side of the base substrate as the first organic switching unit. The organic photodetector is electrically connected to the first organic switching unit, and at least one film layer of the organic photodetector and a film layer of the first organic switching unit are arranged in a same layer and made of a same material.
(FIG. 1)

公开(公告)号：US20240297243A1

公开(公告)日：2024-09-05

申请号：US18026833

申请日：2022-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Yan QU ,  Ce NING ,  Hehe HU ,  Zhengliang LI ,  Nianqi YAO ,  Jie HUANG ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/739 ,  H01L27/092 ,  H01L29/08 ,  H01L29/165 ,  H01L29/66 ,  H01L29/73

CPC classification number: H01L29/7391 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66356 ,  H01L29/7311

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.