公开(公告)号：US20180358569A1

公开(公告)日：2018-12-13

申请号：US15520069

申请日：2016-08-17

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

发明人： Xuelei LIANG ,  Guanbao HUI ,  Boyuan TIAN ,  Fangzhen ZHANG ,  Haiyan ZHAO ,  Jiye XIA ,  Qiuping YAN ,  Lianmao PENG

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0558 ,  H01L29/0673 ,  H01L29/43 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/055

摘要： The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.

公开(公告)号：US20180375045A1

公开(公告)日：2018-12-27

申请号：US15542408

申请日：2016-11-07

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  PEKING UNIVERSITY

发明人： Xuelei LIANG ,  Guanbao HUI ,  Jiye XIA ,  Fangzhen ZHANG ,  Boyuan TIAN ,  Qiuping YAN ,  Lianmao PENG

IPC分类号： H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

摘要： The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.