Tantalum thin film resistors by reactive evaporation
    1.
    发明授权
    Tantalum thin film resistors by reactive evaporation 失效
    钽电薄膜电阻通过反应蒸发

    公开(公告)号:US3874922A

    公开(公告)日:1975-04-01

    申请号:US38906473

    申请日:1973-08-16

    Applicant: BOEING CO

    Inventor: MICKELSEN REID A

    CPC classification number: C23C14/0021 C23C14/541 H01C17/08

    Abstract: In a process of forming tantalum thin film resistors on a substrate by reactive evaporation, the present invention discloses a method for controlling product repeatability to close tolerances by controlling the substrate temperature and substituting a high water partial pressure for standard inert and reactive gaseous environments.

    Abstract translation: 在通过反应蒸发在衬底上形成钽薄膜电阻器的过程中,本发明公开了一种通过控制衬底温度并用高水分压代替标准惰性和反应性气体环境来控制产品重复性以达到公差的方法。

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