公开(公告)号：US20190272875A1

公开(公告)日：2019-09-05

申请号：US16404526

申请日：2019-05-06

申请人： SK hynix Inc. ,  Seoul National University R&DB Foundation

发明人： Cheol Seong HWANG ,  Jaeyeon LEE

IPC分类号： G11C13/00 ,  H01C17/00 ,  H01L45/00 ,  H01C17/08 ,  H01C17/065

摘要： A resistive memory device and a fabricating method thereof are provided. The resistive memory device includes: a first electrode electrically coupled with a first wire; a second electrode facing the first electrode and electrically coupled with a second wire, the second electrode including an oxygen vacancy reservoir and a contact electrode; and a memory cell including a variable resistive layer and being disposed between the first electrode and the second electrode. The variable resistive layer has a conductive filament. which includes oxygen vacancies and connects the first electrode and the second electrode. The oxygen vacancy reservoir is disposed on the variable resistive layer, and the contact electrode is coupled to the oxygen vacancy reservoir and the second wire. The oxygen vacancy reservoir has a volume or oxidizing power to exchange a limited amount of oxygen ions and oxygen vacancies required for switching the conductive filament with the variable resistive layer.

公开(公告)号：US5367285A

公开(公告)日：1994-11-22

申请号：US25411

申请日：1993-02-26

申请人： Philip R. Swinehart ,  S. Scott Courts ,  D. Scott Holmes

发明人： Philip R. Swinehart ,  S. Scott Courts ,  D. Scott Holmes

IPC分类号： H01C1/14 ,  H01C7/00 ,  H01C7/04 ,  H01C17/08 ,  H01C1/012

CPC分类号： H01C1/14 ,  H01C1/1413 ,  H01C17/08 ,  H01C7/006 ,  H01C7/041

摘要： Film resistors, for example, thin film thermistors having a negative temperature coefficient (NTCR) or near-zero TCR electronics resistors, are formed of an alloy of both an electrically insulating oxide and an electrically conducting nitride of at least one metal selected from titanium, tantalum, zirconium, hafnium and niobium. The electrically insulating oxide of the at least one metal is preferably present in the film sufficient to impart a negative temperature coefficient of resistance to thermistors which include the film as a component part. Preferably, the metal is reactive with both an oxygen-containing gas and nitrogen and is deposited onto a substrate by reactive sputtering in the presence of an inert gas (e.g., argon). By controlling the volume ratio of the reactive gasses (e.g., the volume percent of the oxygen-containing gas in the nitrogen gas) and/or flow rate of the reactive gasses with all other parameters constant, the range of temperature coefficient of resistance (TCR) can be "engineered" for a particular film resistor and can thus be usefully employed as thin film thermistors or near-zero TCR electronics resistors as desired.

摘要翻译： 膜电阻器例如具有负温度系数（NTCR）或近零TCR电子电阻器的薄膜热敏电阻由电绝缘氧化物和至少一种金属的导电氮化物的合金形成，所述金属选自钛， 钽，锆，铪和铌。 所述至少一种金属的电绝缘氧化物优选存在于所述膜中足以赋予包括所述膜作为组分部分的热敏电阻的负温度系数。 优选地，金属与含氧气体和氮气都反应，并且在惰性气体（例如氩气）的存在下通过反应性溅射沉积到基底上。 通过控制反应气体的体积比（例如，氮气中含氧气体的体积百分比）和/或反应气体的流量与所有其它参数恒定，电阻温度系数（TCR）的范围 ）可以针对特定的薄膜电阻器“工程化”，并且因此可以有用地用作薄膜热敏电阻或近零TCR电子电阻器。

公开(公告)号：US5317302A

公开(公告)日：1994-05-31

申请号：US945365

申请日：1992-09-16

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01C7/04 ,  H01C17/00 ,  H01C17/08 ,  H01L21/302 ,  H01L21/3065 ,  H01C7/10

CPC分类号： H01C17/003 ,  H01C17/08 ,  H01C7/041

摘要： A diamond thermistor having a pair of diamond contact regions having a low resistance formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamond film using a carbon compound gas and a dopant gas and etching the diamond film to leave the contact regions by an etchant including fluorine or oxygen.

摘要翻译： 金刚石热敏电阻具有在感温金刚石基底上形成的具有低电阻的一对金刚石接触区域。 通过使用碳化合物气体和掺杂剂气体沉积金刚石膜并蚀刻金刚石膜，通过包括氟或氧的蚀刻剂离开接触区域来进行金刚石接触区域的形成。

公开(公告)号：US4530852A

公开(公告)日：1985-07-23

申请号：US570743

申请日：1984-01-16

申请人： Hermann Birnbreier ,  Helmut Haas

发明人： Hermann Birnbreier ,  Helmut Haas

IPC分类号： H01C7/00 ,  H01C17/02 ,  H01C17/06 ,  H01C17/08 ,  H01C17/12 ,  H01C17/26 ,  B05D5/12

CPC分类号： H01C17/08 ,  H01C17/02 ,  H01C17/12 ,  H01C17/265

摘要： Method for producing a thin film resistor by vapor deposition or cathode sputtering techniques, wherein part of the resistance area of the film is covered by an electrically insulating layer which prevents oxygen diffusion onto the resistance material and causes a decrease of the resistance during aging, while the rest of the resistance area remains free.

摘要翻译： 通过气相沉积或阴极溅射技术制造薄膜电阻器的方法，其中膜的电阻面积的一部分被电绝缘层覆盖，该电绝缘层防止氧扩散到电阻材料上并导致老化期间的电阻降低，同时 电阻区的其余部分仍然是空闲的。

公开(公告)号：US4498071A

公开(公告)日：1985-02-05

申请号：US431274

申请日：1982-09-30

申请人： Charles T. Plough, Jr. ,  Ralph D. Hight

发明人： Charles T. Plough, Jr. ,  Ralph D. Hight

IPC分类号： H01C7/00 ,  H01C17/06 ,  H01C17/08 ,  H01C1/012

CPC分类号： H01C7/006 ,  Y10T29/49099

摘要： An electrical resistor and method of making the same is disclosed wherein a ceramic substrate is coated with a relatively rough dielectric film which is subsequently coated with a thin metal film such as nichrome.

摘要翻译： 公开了一种电阻器及其制造方法，其中陶瓷衬底涂覆有相对粗糙的电介质膜，其随后用诸如镍铬合金的薄金属膜涂覆。

公开(公告)号：US4139833A

公开(公告)日：1979-02-13

申请号：US743706

申请日：1976-11-22

申请人： Thomas S. Kirsch

发明人： Thomas S. Kirsch

IPC分类号： H01C7/00 ,  H01C7/22 ,  H01C17/08 ,  H01C1/012

CPC分类号： H01C7/006 ,  H01C17/08 ,  H01C7/22 ,  Y10T29/49085 ,  Y10T29/49099

摘要： A polished ceramic substrate is provided with an insulation layer of silicon monoxide (SiO), over which a nickel metal thin-film is laid down in a spiral or serpentine pattern, taking up a desirably small area, but at the same time giving a high electrical resistance. Finally, a cover or protective layer of silicon monoxide is then deposited over the resistor, serving to protect it from the possibility of outside contamination.

摘要翻译： 抛光陶瓷基板设置有一氧化硅（SiO）的绝缘层，镍基金属薄膜以螺旋或蛇形图案放置在其上，占据期望的小面积，但同时产生高的 电阻。 最后，将一层氧化硅的覆盖物或保护层沉积在电阻器上，以保护其免受外部污染的可能性。

公开(公告)号：US3955039A

公开(公告)日：1976-05-04

申请号：US408100

申请日：1973-10-19

申请人： Manfred Roschy ,  Alois Schauer

发明人： Manfred Roschy ,  Alois Schauer

IPC分类号： C22C21/00 ,  H01B1/02 ,  H01C7/00 ,  H01C7/06 ,  H01C17/06 ,  H01C17/08 ,  H01G4/008 ,  H01G4/40 ,  H01L27/01 ,  H01L49/02 ,  H05K3/10 ,  B05D5/12

CPC分类号： H01C7/006 ,  H01L49/02 ,  Y10T428/31678

摘要： Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60.mu..OMEGA. cm, a temperature coefficient of resistance of +100 ppm.degree./K and a sparking potential of about 400 V when anodizing in 0.1% H.sub.3 PO.sub.4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200.mu..OMEGA. cm, a temperature coefficient of resistance of -100 ppm.degree./K and a sparking potential of about 300 V when anodizing in 0.1% H.sub.3 PO.sub.4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.

摘要翻译： 含有2〜20原子％的Al的Al-Ta合金膜表现出改善的温度稳定性。 含有7原子％的Ta的Al合金膜在0.1％H 3 PO 4中阳极氧化时，电阻率为60μΩEGA·cm，电阻温度系数为+ 100ppm·DEG / K，火花势为约400V。 含有15原子％的Ta的Al合金膜在0.1％的H 3 PO 4中进行阳极氧化时，电阻率为200μΩ/ cm，电阻温度系数为-100ppm / K，火花势为约300V。 将合金膜施加在非导电衬底上，如通过RF阴极溅射所需厚度，并且可用于薄膜电路，分立电阻器，电容器等。

公开(公告)号：US3874922A

公开(公告)日：1975-04-01

申请号：US38906473

申请日：1973-08-16

申请人： BOEING CO

发明人： MICKELSEN REID A

IPC分类号： C23C14/00 ,  C23C14/54 ,  H01C17/08 ,  B44D1/02 ,  C23C13/02

CPC分类号： C23C14/0021 ,  C23C14/541 ,  H01C17/08

摘要： In a process of forming tantalum thin film resistors on a substrate by reactive evaporation, the present invention discloses a method for controlling product repeatability to close tolerances by controlling the substrate temperature and substituting a high water partial pressure for standard inert and reactive gaseous environments.

摘要翻译： 在通过反应蒸发在衬底上形成钽薄膜电阻器的过程中，本发明公开了一种通过控制衬底温度并用高水分压代替标准惰性和反应性气体环境来控制产品重复性以达到公差的方法。

公开(公告)号：US3805128A

公开(公告)日：1974-04-16

申请号：US28568672

申请日：1972-09-01

申请人： HUGHES AIRCRAFT CO

发明人： SCHOLL R ,  BLEHA W

IPC分类号： C23C14/00 ,  C23C14/22 ,  H01C17/08 ,  H01L21/00 ,  H01L29/227 ,  H01L3/20

CPC分类号： H01L21/00 ,  C23C14/00 ,  C23C14/22 ,  H01C17/08 ,  H01L29/227

摘要： A solid state electrical device which exhibits the property of having different and sustained states of electrical conductivity and method for making same is disclosed. More particularly, a method is disclosed for fabricating an improved solid state thin film electronic storage medium which can retain by conductivity modulation a high resolution image momentarily impressed thereupon by means of either optical or electron beam inputs for an extended period of time (several tens of seconds) provided that an applied electric field is maintained across the solid state element. This phenomenon is hereinafter referred to as ''''field sustained conductivity.'''' Removal or reversal of the applied electrical field restores the solid state element to its normally insulating condition.

摘要翻译： 公开了具有不同且持续的电导率状态的固体电气装置及其制造方法。 更具体地，公开了一种用于制造改进的固态薄膜电子存储介质的方法，所述改进的固态薄膜电子存储介质可以通过电导率调制保持通过光学或电子束输入短暂地印刷在其上的高分辨率图像（数十 秒），条件是跨固体元件保持施加的电场。 这种现象在下文中称为“场持续导电性”。 所施加的电场的去除或反转将固态元件恢复到其正常绝缘状态。

公开(公告)号：US3585073A

公开(公告)日：1971-06-15

申请号：US3585073D

申请日：1968-06-27

申请人： PHILIPS CORP

发明人： VEENSTRA GUSTAAF

IPC分类号： C23C14/18 ,  C23C14/54 ,  C23C14/58 ,  H01C17/08 ,  H01C17/26 ,  H01B1/08

CPC分类号： C23C14/18 ,  C23C14/58 ,  C23C14/5853 ,  H01C17/08 ,  H01C17/265

摘要： A METHOD OF MANUFACTURING A THIN FILM RESISTOR IN WHICH A NUMBER OF METAL LAYERS ARE APPLIED TO AN INSULATING MATERIAL AND EACH METAL LAYER IS COMPLETELY OXIDIZED BEFORE THE SUCCEEDING LAYER IS APPLIED.