公开(公告)号：US20100315880A1

公开(公告)日：2010-12-16

申请号：US12814451

申请日：2010-06-12

Applicant: BYOUNG IN JOO

Inventor： BYOUNG IN JOO

IPC: G11C16/06

CPC classification number: G06F11/1048 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459 ,  G11C2216/14

Abstract: A nonvolatile memory device is operated by, inter alia, performing a program operation on memory cells belonging to a page selected from among a plurality of pages, performing a verification operation on the programmed memory cells, loading a start loop value of a fail bit count set to the selected page, from among start loop values of fail bit counts set to the respective pages, and if a loop value of the program operation is greater than or equal to the start loop value, counting a number of fail bits included in data of the programmed memory cells detected in the verification operation.

Abstract translation: 非易失性存储器件通过尤其对属于从多个页面中选择的页面的存储器单元执行编程操作来操作，对所编程的存储器单元执行验证操作，加载故障位计数的启动循环值 设置到所选择的页面，从设置到各个页面的故障位计数的起始循环值中，并且如果程序操作的循环值大于或等于起始循环值，则对包含在数据中的故障位数进行计数 在验证操作中检测到​​的编程存储器单元。