公开(公告)号：US5096840A

公开(公告)日：1992-03-17

申请号：US567835

申请日：1990-08-15

申请人： John C. Bean ,  Gregg S. Higashi ,  Bahram Jalali-Farahani ,  Clifford A. King

发明人： John C. Bean ,  Gregg S. Higashi ,  Bahram Jalali-Farahani ,  Clifford A. King

IPC分类号： H01L29/73 ,  H01L21/225 ,  H01L21/331 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/2253 ,  Y10S148/01

摘要： The inventive method of making a poly-Si emitter transistor (PET) comprises opening an emitter window in a dielectric (typically SiO.sub.2) layer, and depositing onto the thus exposed surface and/or into the single crystal Si material that underlies the exposed surface at least one atomic species. This deposition step is following by the conventional poly-Si deposition, dopant implantation and "drive-in". In a currently preferred embodiment the novel deposition step comprises a low dose, low energy As implantation (5.times.10.sup.13 -2.times.10.sup.15 atoms/cm.sup.2, 0.1-5 keV). The novel method can result in significantly improved device characteristics, e.g., in a doubling of h.sub.FE, as compared to analogous prior art PETs.

公开(公告)号：US5620907A

公开(公告)日：1997-04-15

申请号：US610646

申请日：1996-03-04

申请人： Bahram Jalali-Farahani ,  Clifford A. King

发明人： Bahram Jalali-Farahani ,  Clifford A. King

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.

摘要翻译： 集成电路中的异质结双极晶体管具有固有和非本征基极部分。 本征基本部分基本上包括外延硅 - 锗合金。 外在基部基本上包括多晶材料，并且包含离子注入杂质的分布。 发射极覆盖本征基极部分，并且间隔物至少部分地覆盖发射极。 间隔物通过离子注入的杂质的横向偏移的至少一个距离特性突出到外部基部。

公开(公告)号：US5834800A

公开(公告)日：1998-11-10

申请号：US610026

申请日：1996-03-04

申请人： Bahram Jalali-Farahani ,  Clifford Alan King

发明人： Bahram Jalali-Farahani ,  Clifford Alan King

IPC分类号： H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L29/165 ,  H01L29/737 ,  H03K3/286 ,  H03K19/082 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.

摘要翻译： 集成电路中的异质结双极晶体管具有固有和非本征基极部分。 本征基本部分基本上包括外延硅 - 锗合金。 外在基部基本上包括多晶材料，并且包含离子注入杂质的分布。 发射极覆盖本征基极部分，并且间隔物至少部分地覆盖发射极。 间隔物通过离子注入的杂质的横向偏移的至少一个距离特性突出到外部基部。