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1.发明授权Protection of Cu damascene interconnects by formation of a self-aligned buffer layer 有权通过形成自对准缓冲层来保护铜镶嵌互连公开(公告)号：US08030777B1
公开(公告)日：2011-10-04
申请号：US11671161
申请日：2007-02-05
IPC分类号： H01L23/48
CPC分类号： H01L21/76849 , H01L21/76831 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76867 , H01L21/76886
摘要： Methods of protecting exposed metal damascene interconnect surfaces in a process for making electronic components and the electronic components made according to such methods. An integrated circuit structure having damascene regions with exposed metal surfaces is provided into a closed processing chamber, whereby a first reactant is contacted to the exposed metal surfaces to transform a top portion of the metal layer into a protective self-aligned buffer layer. Reacting molecules of the first reactant with metal atoms of this metal layer forms the protective self-aligned buffer layer entirely within such metal layer. Alternatively, adsorbing surface-active reactant molecules onto the exposed metal surface forms the protective self-aligned buffer layer. A second reactant may be contacted to the protective self-aligned buffer layer to form a self-aligned dielectric cap layer directly over the protective self-aligned buffer layer.
摘要翻译： 在制造电子部件的方法和根据这些方法制造的电子部件的过程中保护暴露的金属镶嵌互连表面的方法。 具有暴露的金属表面的镶嵌区域的集成电路结构被提供到封闭处理室中，由此第一反应物与暴露的金属表面接触以将金属层的顶部部分转变成保护性自对准缓冲层。 使第一反应物与该金属层的金属原子反应的分子在该金属层内完全形成保护性自对准缓冲层。 或者，将表面活性反应物分子吸附到暴露的金属表面上形成保护性自对准缓冲层。 可以将第二反应物与保护性自对准缓冲层接触以在保护性自对准缓冲层上直接形成自对准电介质盖层。
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2.发明授权Protection of Cu damascene interconnects by formation of a self-aligned buffer layer 有权通过形成自对准缓冲层来保护铜镶嵌互连公开(公告)号：US07396759B1
公开(公告)日：2008-07-08
申请号：US10980076
申请日：2004-11-03
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76831 , H01L21/76834 , H01L21/76846 , H01L21/76856 , H01L21/76867 , H01L21/76886
摘要： Methods of protecting exposed metal damascene interconnect surfaces in a process for making electronic components and the electronic components made according to such methods. An integrated circuit structure having damascene regions with exposed metal surfaces is provided into a closed processing chamber, whereby a first reactant is contacted to the exposed metal surfaces to transform a top portion of the metal layer into a protective self-aligned buffer layer. Reacting molecules of the first reactant with metal atoms of this metal layer forms the protective self-aligned buffer layer entirely within such metal layer. Alternatively, adsorbing surface-active reactant molecules onto the exposed metal surface forms the protective self-aligned buffer layer. A second reactant may be contacted to the protective self-aligned buffer layer to form a self-aligned dielectric cap layer directly over the protective self-aligned buffer layer.
摘要翻译： 在制造电子部件的方法和根据这些方法制造的电子部件的过程中保护暴露的金属镶嵌互连表面的方法。 具有暴露的金属表面的镶嵌区域的集成电路结构被提供到封闭处理室中，由此第一反应物与暴露的金属表面接触以将金属层的顶部部分转变成保护性自对准缓冲层。 使第一反应物与该金属层的金属原子反应的分子在该金属层内完全形成保护性自对准缓冲层。 或者，将表面活性反应物分子吸附到暴露的金属表面上形成保护性自对准缓冲层。 可以将第二反应物与保护性自对准缓冲层接触以在保护性自对准缓冲层上直接形成自对准电介质盖层。
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