公开(公告)号：US20050141578A1

公开(公告)日：2005-06-30

申请号：US10871895

申请日：2004-06-18

申请人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

发明人： Benoit Reid ,  Arnaud Fily ,  Norbert Lichtenstein ,  D. Knight

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/2232 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/2237 ,  H01S5/32391

摘要： The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers.

摘要翻译： 本发明提供了可以在p-基板上制造的自对准激光器结构，并提供用于限制漏电流的装置，从而提高结构的整体效率。 波导激光器结构包括依次沉积在p-InP，p-GaAs或p-GaN衬底或其他形式的p衬底上的第一系列层，其中这些层形成p覆层。 随后在该第一系列层上沉积有源层。 绝缘或半绝缘材料的阻挡层沉积在有源层上，其中该阻挡层具有形成在其中的沟槽，其中该半绝缘层被外延沉积。 阻挡层提供了限制电流从而减少泄漏电流的装置。 在阻挡层沉积完成激光结构的第二系列层，其中该第二系列层形成n覆层。 由于n覆层包含多于一种材料，所以该结构提供横向波导。 在完成所有层的沉积之后，在第一系列层的底表面上形成正电极，并且在第二系列层的顶部上形成负电极。