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    Semiconductor laser
    1.
    发明授权
    Semiconductor laser 有权

    公开(公告)号：US12027823B2

    公开(公告)日：2024-07-02

    申请号：US17449560

    申请日：2021-09-30

    申请人： Lumentum Japan, Inc.

    发明人： Shoko Yokokawa ,  Atsushi Nakamura

    IPC分类号： H01S5/22 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34

    CPC分类号： H01S5/2224 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/227 ,  H01S5/34

    摘要： A semiconductor laser includes: a multi-quantum well layer in a mesa structure; a buried layer comprising a semi-insulating semiconductor, the buried layer being in contact with each of both sides of the mesa structure; a first cladding layer with a first conductivity type, the first cladding layer having a lower refractive index than the multi-quantum well layer; a high refractive index layer configured to not absorb light oscillating in the multi-quantum well layer, the high refractive index layer having a higher refractive index than the first cladding layer; a diffraction grating layer at least partially constituting a diffraction grating capable of diffracting the light oscillating in the multi-quantum well layer, the diffraction grating layer not contacting the high refractive index layer; a substrate with the first conductivity type; and a second cladding layer with a second conductivity type above the multi-quantum well layer.

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明公开
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230216278A1

    公开(公告)日：2023-07-06

    申请号：US17569055

    申请日：2022-01-05

    申请人： Modulight Oy

    发明人： Riina Ulkuniemi ,  Ville Vilokkinen ,  Petri Melanen

    IPC分类号： H01S5/227 ,  H01S5/22 ,  H01S5/20

    CPC分类号： H01S5/2272 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/2086

    摘要： A method for fabricating a semiconductor device on a semiconductor substrate, wherein the semiconductor device is adapted to provide target lasing properties, the method includes creating, a mask layer over the semiconductor substrate, the mask layer having at least one opening to expose a region of the semiconductor substrate, etching using a first etching process the exposed region, utilizing inductively coupled plasma with preselected first set of parameters to obtain a baseline mesa profile, the baseline mesa profile having a baseline mesa angle, re-etching using a second etching process the etched region, utilizing inductively coupled plasma with preselected second set of parameters, to alter the baseline mesa profile to obtain a requisite mesa profile having a requisite mesa angle defined by the target lasing properties and the requisite mesa angle being different from the baseline mesa angle, removing the mask layer and defining a p-n junction for the semiconductor substrate.

    Semiconductor laser and manufacturing method thereof
    3.
    发明授权
    Semiconductor laser and manufacturing method thereof 有权

    公开(公告)号：US09979159B2

    公开(公告)日：2018-05-22

    申请号：US14873659

    申请日：2015-10-02

    申请人： Renesas Electronics Corporation

    发明人： Tetsuro Okuda

    IPC分类号： H01S5/227 ,  H01S5/22 ,  H01S3/08 ,  H01S5/062 ,  H01S5/343

    CPC分类号： H01S5/2275 ,  H01S3/08022 ,  H01S5/06226 ,  H01S5/222 ,  H01S5/2222 ,  H01S5/2224 ,  H01S5/2272 ,  H01S5/34306 ,  H01S2304/04

    摘要： In a semiconductor laser, a block layer is provided on both sides of a mesa-type semiconductor part having an n-type cladding layer, an active layer, and a p-type cladding layer. The block layer has: a p-type block layer formed on the side surface of the mesa-type semiconductor part and over a p-type semiconductor substrate; a high-resistance layer formed over the p-type block layer; and an n-type block layer formed over the high-resistance layer, which has a higher resistance than that of the p-type block layer. By providing the high-resistance layer between the p-type block layer and the n-type block layer, the thickness of the p-type block layer can be controlled and a leakage current (flow of a hole) can be reduced. Further, the distance between the n-type cladding layer and the n-type block layer can be secured, and hence a leakage current (flow of an electron) can be prevented.

    Method for producing quantum cascade laser and quantum cascade laser
    4.
    发明授权
    Method for producing quantum cascade laser and quantum cascade laser 有权

    公开(公告)号：US09941666B2

    公开(公告)日：2018-04-10

    申请号：US15372334

    申请日：2016-12-07

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Yukihiro Tsuji

    IPC分类号： H01S5/227 ,  H01S5/12 ,  H01S5/34 ,  H01S5/22

    CPC分类号： H01S5/2275 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/1228 ,  H01S5/124 ,  H01S5/2224 ,  H01S5/3401

    摘要： A method for producing a quantum cascade laser includes the steps of forming a laser structure including a mesa structure and a buried region embedding the mesa structure; forming a mask on the laser structure, the mask including a first pattern that defines a λ/4 period distribution Bragg reflector structure and a second pattern that defines a 3λ/4 period distribution Bragg reflector structure; and forming a first distribution Bragg reflector structure, a second distribution Bragg reflector structure, and a semiconductor waveguide structure by dry-etching the laser structure through the mask, the semiconductor waveguide structure including the mesa structure that has first and second end facets. The first distribution Bragg reflector structure is optically coupled to the first end facet. The second distribution Bragg reflector structure is optically coupled to the second end facet. Here, λ denotes a value of an oscillation wavelength of the quantum cascade laser in vacuum.

    METHOD FOR PRODUCING QUANTUM CASCADE LASER AND QUANTUM CASCADE LASER
    9.
    发明申请
    METHOD FOR PRODUCING QUANTUM CASCADE LASER AND QUANTUM CASCADE LASER 有权

    公开(公告)号：US20170170634A1

    公开(公告)日：2017-06-15

    申请号：US15372346

    申请日：2016-12-07

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： YUKIHIRO TSUJI

    IPC分类号： H01S5/34 ,  H01S5/12 ,  H01S5/227

    CPC分类号： H01S5/3402 ,  H01S5/12 ,  H01S5/125 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3401

    摘要： A method for producing a quantum cascade laser includes the steps of growing a stacked semiconductor layer including a core layer; forming an insulating mask on the stacked semiconductor layer; forming a mesa structure including the core layer by etching the stacked semiconductor layer through the insulating mask; growing a buried layer on a side surface of the mesa structure using the insulating mask by supplying a halogen-based substance and a gas containing a raw material, the buried layer having a thickness larger than a height of the mesa structure; producing a substrate product including the mesa structure and a buried region by processing of the buried layer using a chemical-mechanical polishing method; and after removal of the insulating mask, producing a distributed reflection structure by etching the mesa structure and the buried region of the substrate product using a mask.

    QUANTUM CASCADE SEMICONDUCTOR LASER
    10.
    发明申请
    QUANTUM CASCADE SEMICONDUCTOR LASER 有权
    QUANTUM CASCADE SEMICONDUCTOR激光

    公开(公告)号：US20160294160A1

    公开(公告)日：2016-10-06

    申请号：US15088600

    申请日：2016-04-01

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Jun-ichi HASHIMOTO

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： H01S5/227 ,  H01S5/0224 ,  H01S5/02461 ,  H01S5/125 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3402

    摘要： A quantum cascade semiconductor laser includes a substrate and a semiconductor region provided on a principal surface of the substrate, the semiconductor region including a mesa waveguide, a first burying region provided on a first side surface of the mesa waveguide, and a second burying region provided on a second side surface of the mesa waveguide. Each of the first and second burying regions includes a plurality of laminate regions and a plurality of bulk semiconductor regions that are alternately arrayed. The laminate regions are separated from each other by the bulk semiconductor region. The bulk semiconductor regions are provided on side surfaces of the laminate regions so as to embed the laminate regions. Each of the laminate regions includes a semiconductor laminate structure having a plurality of semiconductor layers.

    摘要翻译： 量子级联半导体激光器包括衬底和设置在衬底的主表面上的半导体区域，所述半导体区域包括台面波导，设置在台面波导的第一侧表面上的第一掩埋区域和设置在台面波导的第一侧表面上的第二掩埋区域 在台面波导的第二侧表面上。 第一和第二埋藏区域中的每一个包括交替排列的多个层叠区域和多个体半导体区域。 层叠区域通过体半导体区域彼此分离。 体积半导体区域设置在层叠区域的侧表面上，以便嵌入层叠区域。 每个层叠区域包括具有多个半导体层的半导体层叠结构。