公开(公告)号：US20190393352A1

公开(公告)日：2019-12-26

申请号：US16017966

申请日：2018-06-25

申请人： Biswajeet GUHA ,  William HSU ,  Leonard P. GULER ,  Dax M. CRUM ,  Tahir GHANI

发明人： Biswajeet GUHA ,  William HSU ,  Leonard P. GULER ,  Dax M. CRUM ,  Tahir GHANI

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L21/02 ,  H01L21/8234 ,  H01L23/522

摘要： Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.