IN-PLANE-STRAIN-ACTUATED OUT-OF-PLANE ACTUATOR
    3.
    发明申请
    IN-PLANE-STRAIN-ACTUATED OUT-OF-PLANE ACTUATOR 审中-公开
    平面应力致动的非平面执行机构

    公开(公告)号:US20160158933A1

    公开(公告)日:2016-06-09

    申请号:US14216063

    申请日:2014-03-17

    Abstract: A micromechanical device capable of providing out-of-plane motion and force generation in response to an in-plane strain applied to the device is provided. Embodiments of the present invention comprise one or more islands that are operatively coupled with one or more hinges. The hinges are operative for inducing rotation of the islands when a lateral strain is applied to the structure. In some embodiments, the hinges are also electrically conductive such that they enable electrical communication between the one or more islands and devices external to the structure. Some embodiments of the present invention are particularly well suited for use in biological applications. Some devices in accordance with the present invention are fabricated using conventional planar processes, such as flex-circuit fabrication techniques.

    Abstract translation: 提供了一种能够响应于施加到设备的平面内应变来提供面外运动和力产生的微机械装置。 本发明的实施例包括与一个或多个铰链可操作地联接的一个或多个岛。 当向结构施加横向应变时,铰链用于引起岛的旋转。 在一些实施例中,铰链也是导电的,使得它们使得能够在结构外部的一个或多个岛和装置之间进行电连通。 本发明的一些实施方案特别适用于生物应用。 根据本发明的一些装置使用诸如柔性电路制造技术的常规平面工艺制造。

    METHOD FOR PRODUCTION OF A MICROSTRUCTURED MOLDED OBJECT
    4.
    发明申请
    METHOD FOR PRODUCTION OF A MICROSTRUCTURED MOLDED OBJECT 有权
    生产微结构模制物体的方法

    公开(公告)号:US20130270225A1

    公开(公告)日:2013-10-17

    申请号:US13862023

    申请日:2013-04-12

    Abstract: A method is provided for producing a microstructured molded object that is intended for culturing of biological cells. According to this method, a plastically deformable first porous film is prepared, as well as a deformable second film and a deformable sacrificial film. The first, second and sacrificial film are placed in a stack. Next, the sacrificial film is subjected to pressure to press the stack into a mold. The mold has recesses, such that deformed regions in the form of cavities are produced in the sacrificial film, the first film and the second film, and undeformed regions remain. During the pressing of the film stack into the mold, the first film and the second film are joined to each other, so that they form a composite film. At least portions of the deformed regions of the second film are etched so that sections of the second film are chemically dissolved. In these sections of the second film, sections in the deformed regions of the first film are opened up, so that the pores in these sections are again free.

    Abstract translation: 提供了用于生产用于培养生物细胞的微结构模制物体的方法。 根据该方法,制备可塑性变形的第一多孔膜,以及可变形的第二膜和可变形的牺牲膜。 第一,第二和牺牲膜被放置在堆叠中。 接下来,牺牲膜经受压力以将叠层压入模具中。 模具具有凹部,使得在牺牲膜,第一膜和第二膜中产生空腔形式的变形区域,并且保留未变形的区域。 在将膜堆叠压入模具期间,第一膜和第二膜彼此接合,从而形成复合膜。 蚀刻第二膜的变形区域的至少部分,使得第二膜的部分化学溶解。 在第二膜的这些部分中,第一膜的变形区域中的部分被打开,使得这些部分中的孔再次游离。

    Semiconductor device having three-dimensional construction and method for manufacturing the same
    6.
    发明授权
    Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
    具有三维结构的半导体器件及其制造方法

    公开(公告)号:US07541257B2

    公开(公告)日:2009-06-02

    申请号:US11519064

    申请日:2006-09-12

    Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

    Abstract translation: 半导体器件包括:硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分,使得氧化硅膜提供三维结构。 通过使用三维构造,在该装置中容易添加诸如电阻器或电容器的附加功能。 此外,该三维构造的制造方法简单,成本低。

    Semiconductor device having three-dimensional construction and method for manufacturing the same
    8.
    发明申请
    Semiconductor device having three-dimensional construction and method for manufacturing the same 失效
    具有三维结构的半导体器件及其制造方法

    公开(公告)号:US20070066052A1

    公开(公告)日:2007-03-22

    申请号:US11519064

    申请日:2006-09-12

    Abstract: A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

    Abstract translation: 半导体器件包括:硅衬底; 以及设置在硅衬底上的氧化硅膜。 氧化硅膜包括从硅衬底的表面分离的部分,使得氧化硅膜提供三维结构。 通过使用三维构造,在该装置中容易添加诸如电阻器或电容器的附加功能。 此外,该三维构造的制造方法简单,成本低。

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