公开(公告)号：US08426584B2

公开(公告)日：2013-04-23

申请号：US13355030

申请日：2012-01-20

申请人： Branko Mitasev ,  Dae-Shik Kim ,  Kazuhiro Yoshizawa

发明人： Branko Mitasev ,  Dae-Shik Kim ,  Kazuhiro Yoshizawa

IPC分类号： C07D513/04 ,  C07D307/22 ,  C07D498/04

CPC分类号： C07D307/22 ,  C07D498/04 ,  C07D513/04

摘要： Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

公开(公告)号：US20120190848A1

公开(公告)日：2012-07-26

申请号：US13355030

申请日：2012-01-20

申请人： Branko Mitasev ,  Dae-Shik Kim ,  Huiming Zhang ,  Matthew J. Schnaderbeck ,  Christopher N. Farthing ,  Kazuhiro Yoshizawa

发明人： Branko Mitasev ,  Dae-Shik Kim ,  Huiming Zhang ,  Matthew J. Schnaderbeck ,  Christopher N. Farthing ,  Kazuhiro Yoshizawa

IPC分类号： C07D513/04 ,  C07D307/22 ,  C07D498/04

CPC分类号： C07D307/22 ,  C07D498/04 ,  C07D513/04

摘要： Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

摘要翻译： 提供了可用于制备可用作β-位淀粉样蛋白前体蛋白（APP）消除酶抑制剂的化合物的化合物和方法。

公开(公告)号：US20100200945A1

公开(公告)日：2010-08-12

申请号：US12662452

申请日：2010-04-19

申请人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

发明人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/47 ,  H01L29/66143

摘要： A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.

摘要翻译： 肖特基二极管可以包括包括在半导体衬底中形成的阱和与第一阱接触的第一电极的肖特基结。 该井可具有第一导电类型。 第一欧姆结可以包括形成在阱中的第一结区域和与第一结区接触的第二电极。 第一结区可能具有比阱更高的第一导电类型的浓度。 可以在分离肖特基结和第一欧姆结的半导体衬底中形成第一器件隔离区。 可以在井中形成具有与第一导电类型相反的第二导电类型的保护罩。 阱护套的至少一部分可以形成在肖特基结的一部分下方。

公开(公告)号：US08018021B2

公开(公告)日：2011-09-13

申请号：US12662452

申请日：2010-04-19

申请人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

发明人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/47 ,  H01L29/66143

摘要： A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.

摘要翻译： 肖特基二极管可以包括包括在半导体衬底中形成的阱和与第一阱接触的第一电极的肖特基结。 该井可具有第一导电类型。 第一欧姆结可以包括形成在阱中的第一结区域和与第一结区接触的第二电极。 第一结区可能具有比阱更高的第一导电类型的浓度。 可以在分离肖特基结和第一欧姆结的半导体衬底中形成第一器件隔离区。 可以在井中形成具有与第一导电类型相反的第二导电类型的保护罩。 阱护套的至少一部分可以形成在肖特基结的一部分下方。

公开(公告)号：US20080006899A1

公开(公告)日：2008-01-10

申请号：US11797560

申请日：2007-05-04

申请人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

发明人： Dae-Shik Kim ,  Oh-Kyum Kwon ,  Myung-Hee Kim ,  Yong-Chan Kim ,  Hye-Young Park ,  Joon-Suk Oh

IPC分类号： H01L29/47 ,  H01L21/28

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/47 ,  H01L29/66143

摘要： A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may, be formed under a portion of the schottky junction.

摘要翻译： 肖特基二极管可以包括包括在半导体衬底中形成的阱和与第一阱接触的第一电极的肖特基结。 该井可具有第一导电类型。 第一欧姆结可以包括形成在阱中的第一结区域和与第一结区接触的第二电极。 第一结区可能具有比阱更高的第一导电类型的浓度。 可以在分离肖特基结和第一欧姆结的半导体衬底中形成第一器件隔离区。 可以在井中形成具有与第一导电类型相反的第二导电类型的保护罩。 可以在肖特基结的一部分下方形成阱护罩的至少一部分。