摘要:
A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then formed on the mandrel and on the base structure, wherein the polycrystalline layer contacts the base structure. The polycrystalline semiconductor layer is then recrystallized so that it has a crystallinity substantially similar to that of the base structure. Thus, a freestanding semiconductor layer is formed with a high degree of control of the thickness and height thereof and maintaining a uniformity of thickness.
摘要:
A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then formed on the mandrel and on the base structure, wherein the polycrystalline layer contacts the base structure. The polycrystalline semiconductor layer is then recrystallized so that it has a crystallinity substantially similar to that of the base structure. Thus, a freestanding semiconductor layer is formed with a high degree of control of the thickness and height thereof and maintaining a uniformity of thickness.
摘要:
A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
摘要:
A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the substrate, the SiGe layer, and the semiconductor layer; a pair of first gate structures adjacent to the insulating layer; and a second gate structure over the insulating layer. Preferably, the insulating layer is adjacent to a side surface of the SiGe layer and an upper surface of the semiconductor layer, a lower surface of the semiconductor layer, and a side surface of the semiconductor layer. Preferably, the SiGe layer comprises carbon. Preferably, the pair of first gate structures are substantially transverse to the second gate structure. Additionally, the pair of first gate structures are preferably encapsulated by the insulating layer.
摘要:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
摘要:
The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.
摘要:
A MOS device with first and second freestanding semiconductor bodies formed on a substrate. The first freestanding semiconductor body has a first portion thereof disposed at a non-orientation orthogonal, non parallel orientation with respect to a first portion of the second freestanding semiconductor body. These portions of said first and second freestanding semiconductor bodies have respective first and second crystalline orientations. A first gate electrode crosses over at least part of said first portion of said first freestanding semiconductor body at a non-orthogonal angle, as does a second gate electrode over the first portion of the second freestanding semiconductor body.
摘要:
A finFET (100) having sidwall spacers (136, 140) to suppress parasitic devices in the upper region of a channel and at the bases of source(s) and drain(s) that are artifacts of the fabrication techniques used to make the finFET. The FinFET is formed on an SOI wafer (104) by etching through a hardmask (148) so as to form a freestanding fin (120). Prior to doping the source(s) (124) and drain(s) (128), a layer (156) of thermal oxide is deposited over the entire finFET. This layer is etched away so as to form the sidewall spacers at each reentrant corner formed where a horizontal surface meets a vertical surface. Sidewall spacers (136) inhibit doping of the upper region of source(s) and drain(s) immediately adjacent the gate. Sidewall spacers (140) fill in any undercut regions (144) of BOX layer (116) that may have been formed during prior fabrication steps.
摘要:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
摘要:
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.