公开(公告)号：US6037271A

公开(公告)日：2000-03-14

申请号：US176588

申请日：1998-10-21

申请人： Brent D. Carlson ,  Erik D. Olson ,  James R. Oikari

发明人： Brent D. Carlson ,  Erik D. Olson ,  James R. Oikari

IPC分类号： H01L21/00 ,  H01L21/306

CPC分类号： H01L21/02043 ,  H01L21/02032 ,  H01L21/67051

摘要： A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer being located above the silicon oxide layer. The process includes the steps of treating the substrate with a series of chemical formulations adapted to successively remove the materials of the plurality of layers until the silicon material base is exposed, the silicon oxide layer being removed by treatment with HF, wherein the HF treatment to remove said silicon oxide layer comprises exposing the substrate to:initially, a dilute HF solution of no more than 1.0% concentration;subsequently, a concentrated HF solution of from about 2.5% to about 10% concentration; andfinally, a dilute HF solution of no more than 1.0% concentration.

摘要翻译： 一种用于从具有硅材料基底的衬底去除多层不同材料的方法，所述层中的至少一个是氧化硅材料，并且所述层中的至少一个包括金属和金属层位于 氧化硅层。 该方法包括以下步骤：用一系列适用于连续除去多个层的材料的化学配方处理衬底，直到硅材料基底露出，氧化硅层通过HF处理除去，其中HF处理 去除所述氧化硅层包括将基底暴露于：最初，浓度不超过1.0％的稀HF溶液; 随后，浓度为约2.5％至约10％的浓缩HF溶液; 最后，浓度不超过1.0％的稀HF溶液。