公开(公告)号：US20200234993A1

公开(公告)日：2020-07-23

申请号：US16747271

申请日：2020-01-20

Applicant: Brewer Science, Inc.

Inventor： Luke Prenger ,  Arthur O. Southard ,  Qi Wu ,  Xiao Liu

IPC: H01L21/683 ,  C08G73/02 ,  B32B43/00 ,  H01L21/56

Abstract: Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.

公开(公告)号：US11610801B2

公开(公告)日：2023-03-21

申请号：US16747271

申请日：2020-01-20

Applicant: Brewer Science, Inc.

Inventor： Luke Prenger ,  Arthur O. Southard ,  Qi Wu ,  Xiao Liu

IPC: H01L21/683 ,  C08G73/02 ,  H01L21/56 ,  B32B43/00

Abstract: Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.

公开(公告)号：US20230187257A1

公开(公告)日：2023-06-15

申请号：US18162028

申请日：2023-01-31

Applicant: Brewer Science, Inc.

Inventor： Luke Prenger ,  Arthur O. Southard ,  Qi Wu ,  Xiao Liu

IPC: H01L21/683 ,  C08G73/02 ,  H01L21/56 ,  B32B43/00

CPC classification number: H01L21/6835 ,  C08G73/026 ,  H01L21/568 ,  B32B43/006 ,  B32B2457/00

Abstract: Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.