公开(公告)号：US08461664B2

公开(公告)日：2013-06-11

申请号：US13115453

申请日：2011-05-25

申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

IPC分类号： H01L29/20

CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

公开(公告)号：US08459123B2

公开(公告)日：2013-06-11

申请号：US12569691

申请日：2009-09-29

申请人： Todd H. Stievater ,  William S Rabinovich ,  Nicolas A Papanicolaou ,  Robert Bass ,  Jennifer L Stepnowski ,  R Andrew McGill

发明人： Todd H. Stievater ,  William S Rabinovich ,  Nicolas A Papanicolaou ,  Robert Bass ,  Jennifer L Stepnowski ,  R Andrew McGill

IPC分类号： G01B9/02

CPC分类号： G01N29/036 ,  G01N2291/0256

摘要： Micro-opto-mechanical chemical sensors and methods for simultaneously detecting and discriminating between a variety of vapor-phase analytes. One embodiment of the sensor is a photonic microharp chemical sensor with an array of closely spaced microbridges, each differing slightly in length and coated with a different sorbent polymer. The microbridges can be excited photothermally, and the microbridges can be optically interrogated using microcavity interferometry. Other actuation methods include piezoelectric, piezoresistive, electrothermal, and magnetic. Other read-out techniques include using a lever arm and other interferometric techniques.

摘要翻译： 微光机械化学传感器和同时检测和区分各种气相分析物的方法。 传感器的一个实施例是具有紧密间隔的微桥阵列的光子微量化学传感器，每个微桥长度略微不同，并涂覆有不同的吸附剂聚合物。 微桥可以光热激发，微桥可以使用微腔干涉法进行光学询问。 其他致动方法包括压电，压阻，电热和磁性。 其他读出技术包括使用杠杆臂和其他干涉测量技术。