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    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits
    1.
    发明申请
    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的n沟道场效应晶体管和p沟道场效应晶体管用于互补电路

    公开(公告)号：US20130149845A1

    公开(公告)日：2013-06-13

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits
    2.
    发明申请
    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的N沟道场效应晶体管和P沟道场效应晶体管用于互补电路

    公开(公告)号：US20110297916A1

    公开(公告)日：2011-12-08

    申请号：US13115453

    申请日：2011-05-25

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    n- and p-channel field effect transistors with single quantum well for complementary circuits
    3.
    发明授权
    n- and p-channel field effect transistors with single quantum well for complementary circuits 有权
    具有用于互补电路的单量子阱的n沟道场效应晶体管和p沟道场效应晶体管

    公开(公告)号：US08652959B2

    公开(公告)日：2014-02-18

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/28

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    N- and p-channel field-effect transistors with single quantum well for complementary circuits
    4.
    发明授权
    N- and p-channel field-effect transistors with single quantum well for complementary circuits 有权
    具有用于互补电路的单量子阱的N沟道场效应晶体管和p沟道场效应晶体管

    公开(公告)号：US08461664B2

    公开(公告)日：2013-06-11

    申请号：US13115453

    申请日：2011-05-25

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

    IPC分类号： H01L29/20

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies
    5.
    发明申请
    P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies 有权
    P-N结，用于从GHZ到THZ频率的RF混频器

    公开(公告)号：US20090302352A1

    公开(公告)日：2009-12-10

    申请号：US12476298

    申请日：2009-06-02

    申请人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

    发明人： Richard Magno ,  Mario Ancona ,  John Bradley Boos ,  James G. Champlain ,  Harvey S. Newman

    IPC分类号： H01L29/207 ,  H01L21/203

    CPC分类号： H01L29/205 ,  H01L21/02398 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/201 ,  H01L29/207 ,  H01L29/861

    摘要： This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59 layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41 Sb0.59 layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59 layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59 layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59 layer is Te doped.

    摘要翻译： 本公开描述了一种半导体器件，其可以用作从几十GHz到THz频率范围的RF频率的混频器。 该器件由固体源分子束外延生长的窄带隙半导体组成。 该器件可以包括GaSb衬底，GaSb衬底上的AlSb层，AlSb层上的In0.69Al0.31As0.41Sb0.59层，其中In0.69Al0.31As0.41Sb0.59包含不同水平的Te掺杂 ，In0.69Al0.31As0.41 Sb0.59层的In0.27Ga0.73Sb层，其中In0.27Ga0.73Sb层被掺杂，其中In0.69Al0.31As0.41Sb0.59层的第一段 已掺杂Te，其中In0.69Al0.31As0.41Sb0.59层的第二段具有Te浓度的等级，其中In0.69Al0.31As0.41Sb0.59层的第三段为Te掺杂。