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22 条记录 (耗时 0.049 秒)

    Method of manufacturing a trench transistor having a heavy body region
    1.
    发明授权
    Method of manufacturing a trench transistor having a heavy body region 有权
    制造具有重体区域的沟槽晶体管的方法

    公开(公告)号：US07148111B2

    公开(公告)日：2006-12-12

    申请号：US10927788

    申请日：2004-08-27

    申请人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    发明人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811

    摘要： A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

    摘要翻译： 提供了沟槽场效应晶体管，其包括（a）半导体衬底，（b）在半导体衬底中延伸预定深度的沟槽，（c）位于沟槽相对侧上的一对掺杂源极结（d ）掺杂的重体，其位于与沟槽的源极结的相对侧上的每个源极结附近，重体的最深部分比沟槽的预定深度更深地延伸到所述半导体衬底中，以及（e）掺杂 很好地围着沉重的身体下面的沉重的身体。

    Method of manufacturing a trench transistor having a heavy body region
    2.
    发明授权
    Method of manufacturing a trench transistor having a heavy body region 有权
    制造具有重体区域的沟槽晶体管的方法

    公开(公告)号：US07696571B2

    公开(公告)日：2010-04-13

    申请号：US12329509

    申请日：2008-12-05

    申请人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    发明人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean E. Probst

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811

    摘要： A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

    摘要翻译： 提供了沟槽场效应晶体管，其包括（a）半导体衬底，（b）在半导体衬底中延伸预定深度的沟槽，（c）位于沟槽相对侧上的一对掺杂源极结（d ）掺杂的重体，其位于与沟槽的源极结的相对侧上的每个源极结附近，重体的最深部分比沟槽的预定深度更深地延伸到所述半导体衬底中，以及（e）掺杂 很好地围着沉重的身体下面的沉重的身体。

    Field effect transistor and method of its manufacture
    6.
    发明授权
    Field effect transistor and method of its manufacture 失效
    场效应晶体管及其制造方法

    公开(公告)号：US06429481B1

    公开(公告)日：2002-08-06

    申请号：US08970221

    申请日：1997-11-14

    申请人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean Edward Probst

    发明人： Brian Sze-Ki Mo ,  Duc Chau ,  Steven Sapp ,  Izak Bencuya ,  Dean Edward Probst

    IPC分类号： H01L2978

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/7811

    摘要： A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.

    摘要翻译： 提供了沟槽场效应晶体管，其包括（a）半导体衬底，（b）在半导体衬底中延伸预定深度的沟槽，（c）位于沟槽相对侧上的一对掺杂源极结（d ）掺杂的重体，其位于与沟槽的源极结的相对侧上的每个源极结附近，重体的最深部分比沟槽的预定深度更深地延伸到所述半导体衬底中，以及（e）掺杂 很好地围着沉重的身体下面的沉重的身体。