公开(公告)号：US09190501B2

公开(公告)日：2015-11-17

申请号：US13800063

申请日：2013-03-13

Applicant: Broadcom Corporation

Inventor： Akira Ito ,  Kenneth Yau

IPC: H01L29/66 ,  H01L29/735 ,  H01L29/08 ,  H01L29/739

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/739

Abstract: A semiconductor device includes an emitter region, a collector region and a base region. The emitter region is implanted in a semiconductor substrate. The collector region is implanted in the semiconductor substrate. The base region is disposed between the emitter region and collector region. The base region includes no more than one LDD region and no more than one halo region. The base region contacts directly with at least one of the emitter region and the collector region.

Abstract translation: 半导体器件包括发射极区域，集电极区域和基极区域。 发射极区域被注入到半导体衬底中。 集电极区域被注入到半导体衬底中。 基极区域设置在发射极区域和收集极区域之间。 碱性区域包括不超过一个LDD区域和不多于一个卤素区域。 基极区域与发射极区域和集电极区域中的至少一个直接接触。

公开(公告)号：US20140239451A1

公开(公告)日：2014-08-28

申请号：US13800063

申请日：2013-03-13

Applicant: Broadcom Corporation

Inventor： Akira Ito ,  Kenneth Yau

IPC: H01L29/735 ,  H01L29/66

CPC classification number: H01L29/735 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/739

Abstract: A semiconductor device includes an emitter region, a collector region and a base region. The emitter region is implanted in a semiconductor substrate. The collector region is implanted in the semiconductor substrate. The base region is disposed between the emitter region and collector region. The base region includes no more than one LDD region and no more than one halo region. The base region contacts directly with at least one of the emitter region and the collector region.

Abstract translation: 半导体器件包括发射极区域，集电极区域和基极区域。 发射极区域被注入到半导体衬底中。 集电极区域被注入到半导体衬底中。 基极区域设置在发射极区域和收集极区域之间。 碱性区域包括不超过一个LDD区域和不多于一个卤素区域。 基极区域与发射极区域和集电极区域中的至少一个直接接触。