公开(公告)号：US20150187439A1

公开(公告)日：2015-07-02

申请号：US14141239

申请日：2013-12-26

申请人： Bruce Querbach ,  Theodore Z. Schoenborn ,  David J. Zimmerman ,  David G. Ellis ,  Christopher W. Hampson ,  Ifar Wan ,  Yulan Zhang ,  Ramakrishna Mallela ,  William K. Lui

发明人： Bruce Querbach ,  Theodore Z. Schoenborn ,  David J. Zimmerman ,  David G. Ellis ,  Christopher W. Hampson ,  Ifar Wan ,  Yulan Zhang ,  Ramakrishna Mallela ,  William K. Lui

IPC分类号： G11C29/36 ,  G06F11/263

CPC分类号： G11C29/36 ,  G06F11/263 ,  G06F11/27 ,  G11C11/406 ,  G11C29/10 ,  G11C29/4401 ,  G11C29/72 ,  G11C29/78 ,  G11C2029/4402

摘要： In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. Other aspects are described herein.

摘要翻译： 根据本说明书，装置包括内部缺陷检测和修复电路，其包括内置于装置内的自检逻辑电路和内置在装置内的自修复逻辑电路。 在一个实施例中，内置自检逻辑电路可以被配置为自动识别存储器中的有缺陷的存储器单元。 在识别一个或多个有缺陷的存储器单元时，内置的自修复逻辑电路可以被配置为通过用存储器内的备用单元替换有缺陷的单元来自动修复有缺陷的存储单元。 本文描述了其它方面。