Immersion lithography system using a sealed wafer bath
    1.
    发明授权
    Immersion lithography system using a sealed wafer bath 有权
    浸没光刻系统使用密封晶圆槽

    公开(公告)号:US08253922B2

    公开(公告)日:2012-08-28

    申请号:US11671046

    申请日:2007-02-05

    CPC classification number: G03F7/70866 G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备,其包括透镜组件,该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台,晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环, 晶片台,用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱,相对于晶片台定位的流体箱,用于使保留在晶片台上的晶片完全浸没在浸没流体中,并且覆盖设置在流体的至少一部分上 罐,用于在流体箱内提供温度控制,流体丰富的环境。

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