公开(公告)号：US20110220868A1

公开(公告)日：2011-09-15

申请号：US12971721

申请日：2010-12-17

申请人： Byeong-Kyun CHOI ,  Jae-Heun Lee

发明人： Byeong-Kyun CHOI ,  Jae-Heun Lee

IPC分类号： H01L33/06 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/32

摘要： Discussed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to the outside, and a method for manufacturing the same. The nitride semiconductor light emitting device includes according to an embodiment a buffer layer formed on a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, formed on the buffer layer, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer, wherein the substrate has a light transmitting property, and respective corners of the substrate are rounded so as to have a designated curvature.

摘要翻译： 讨论了一种氮化物半导体发光器件，其中临界角通过使基底的四舍五入而增加，以便由于从其内部产生的光量的增加并提取到外部来提高光提取效率，并且提供了一种方法 制造相同。 氮化物半导体发光器件包括根据实施例的形成在衬底上的缓冲层，形成在缓冲层上的第一导电半导体层，有源层和第二导电半导体层的发光结构，形成的第一电极 在所述第一导电半导体层上形成的第二电极和形成在所述第二导电半导体层上的第二电极，其中，所述基板具有透光性，并且所述基板的各个角部为圆形，以具有指定的曲率。

公开(公告)号：US08558216B2

公开(公告)日：2013-10-15

申请号：US12971721

申请日：2010-12-17

申请人： Byeong-Kyun Choi ,  Jae-Heun Lee

发明人： Byeong-Kyun Choi ,  Jae-Heun Lee

IPC分类号： H01L29/06

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/32

摘要： Discussed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to the outside, and a method for manufacturing the same. The nitride semiconductor light emitting device includes according to an embodiment a buffer layer formed on a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, formed on the buffer layer, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer, wherein the substrate has a light transmitting property, and respective corners of the substrate are rounded so as to have a designated curvature.

摘要翻译： 讨论了一种氮化物半导体发光器件，其中临界角通过使基底的四舍五入而增加，以便由于从其内部产生的光量的增加并提取到外部来提高光提取效率，并且提供了一种方法 制造相同。 氮化物半导体发光器件包括根据实施例的形成在衬底上的缓冲层，形成在缓冲层上的第一导电半导体层，有源层和第二导电半导体层的发光结构，形成的第一电极 在所述第一导电半导体层上形成的第二电极和形成在所述第二导电半导体层上的第二电极，其中，所述基板具有透光性，并且所述基板的各个角部为圆形，以具有指定的曲率。