公开(公告)号：US20110089508A1

公开(公告)日：2011-04-21

申请号：US12897914

申请日：2010-10-05

申请人： Byoung Chul MIN ,  Gyung Min CHOI ,  Kyung Ho SHIN

发明人： Byoung Chul MIN ,  Gyung Min CHOI ,  Kyung Ho SHIN

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286

摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。