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公开(公告)号：US08841006B2
公开(公告)日：2014-09-23
申请号：US12658853
申请日：2010-02-16
申请人： Gyung-Min Choi , Byoung Chul Min , Kyung Ho Shin
发明人： Gyung-Min Choi , Byoung Chul Min , Kyung Ho Shin
IPC分类号： G11C11/02 , H01F10/32 , H01F10/14 , G11C11/15 , B82Y25/00 , B82Y40/00 , H01F41/30 , H01L43/10 , H01L43/12 , G01R33/09 , H01F10/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。
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公开(公告)号：US20110084347A1
公开(公告)日：2011-04-14
申请号：US12707047
申请日：2010-02-17
申请人： Il-Jae Shin , Byoung-Chul Min , Kyung-Ho Shin
发明人： Il-Jae Shin , Byoung-Chul Min , Kyung-Ho Shin
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/22 , H01F41/307 , H01L43/12
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁隧道结装置包括：i）具有可切换磁化方向的第一磁性层，ii）设置在第一磁性层上的非磁性层，iii）设置在非磁性层上并具有固定磁化方向的第二磁性层，iv） 设置在所述第二磁性层上的氧化防止层，v）设置在所述防氧化层上的第三磁性层，并且通过与所述第二磁性层的磁耦合来固定所述第二磁性层的磁化方向，以及vi）反铁磁层 设置在第三磁性层上并固定第三磁性层的磁化方向。
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公开(公告)号：US20110045320A1
公开(公告)日：2011-02-24
申请号：US12658853
申请日：2010-02-16
申请人： Gyung-Min Choi , Byoung Chul Min , Kyung Ho Shin
发明人： Gyung-Min Choi , Byoung Chul Min , Kyung Ho Shin
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。 第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素 （Hf）。
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4.发明授权Method for simulating fluid flow and recording medium for performing the method 有权用于模拟流体流动的方法和用于执行该方法的记录介质公开(公告)号：US08775139B2
公开(公告)日：2014-07-08
申请号：US13162406
申请日：2011-06-16
申请人： Jae Wan Shim , Hyun Cheol Koo , Suk Hee Han , Byoung Chul Min , Jun Woo Choi , Kyung Ho Shin , Jin Dong Song
发明人： Jae Wan Shim , Hyun Cheol Koo , Suk Hee Han , Byoung Chul Min , Jun Woo Choi , Kyung Ho Shin , Jin Dong Song
CPC分类号： G06F17/5018 , G06F17/5009 , G06F2217/16 , G06T13/20 , G06T13/80
摘要： A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.
摘要翻译： 用于模拟流体流动的方法包括：离散流体流入规则晶格的空间; 假设流体颗粒在格子中重复地移动和碰撞; 通过比较Maxwell-Boltzmann分布与离散Maxwell-Boltzmann分布之间的速度的第n（n是非负整数）阶次动量，得出单变量多项式方程; 基于单变量多项式方程计算与流体颗粒的离散速度对应的权重系数; 并使用权重系数导出格子波尔兹曼模型。 可以很容易地得出具有优异的稳定性和精度的晶格玻尔兹曼模型。
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5.发明授权公开(公告)号：US08319297B2
公开(公告)日：2012-11-27
申请号：US12897914
申请日：2010-10-05
申请人： Byoung Chul Min , Gyung Min Choi , Kyung Ho Shin
发明人： Byoung Chul Min , Gyung Min Choi , Kyung Ho Shin
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286
摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.
摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。
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6.发明申请公开(公告)号：US20110089508A1
公开(公告)日：2011-04-21
申请号：US12897914
申请日：2010-10-05
申请人： Byoung Chul MIN , Gyung Min CHOI , Kyung Ho SHIN
发明人： Byoung Chul MIN , Gyung Min CHOI , Kyung Ho SHIN
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286
摘要： Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.
摘要翻译： 公开了具有垂直各向异性自由层的磁性隧道结结构，并且可以通过保持自由磁化的磁化方向来实现减小切换和保持热稳定性所需的临界电流值，即使器件制造尺寸较小 层和固定磁性层构成彼此垂直的磁性隧道结结构。
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7.发明申请MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING FREE LAYER WITH OBLIQUE MAGNETIZATION 有权具有轻度磁化的自由层的磁性隧道结结构公开(公告)号：US20100109111A1
公开(公告)日：2010-05-06
申请号：US12608103
申请日：2009-10-29
申请人： Kyung Ho SHIN , Byoung Chul MIN
发明人： Kyung Ho SHIN , Byoung Chul MIN
IPC分类号： H01L29/82
CPC分类号： H01F10/3254 , B82Y25/00 , G11C11/161 , H01F10/3277 , H01F10/3286 , H01L43/08 , H03B15/006 , Y10T428/1114 , Y10T428/1143
摘要： The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers.According to the present invention, a free magnetic layer constituting the is magnetic tunnel junction structure consists of at least two or more magnetic thin films having different magnetic anisotropic directions and sizes, thereby independently optimizing the effect of increasing a read signal value and reducing a critical current value required for switching.
摘要翻译： 本发明提供一种磁性隧道结结构，其包括具有固定的磁化方向的第一磁性层; 具有可逆磁化方向的第二磁性层; 形成在所述第一磁性层和所述第二磁性层之间的非磁性层; 允许第二磁性层的磁化方向相对于第二磁性层的平面通过与第二磁性层的磁耦合而倾斜的第三磁性层，并且其垂直磁性各向异性能量大于面内 磁性各向异性能; 以及在所述第二磁性层和所述第三磁性层之间形成的用于分离所述第二和第三磁性层之间的结晶结构的晶体结构分离层。 根据本发明，构成磁性隧道结结构的自由磁性层由具有不同的磁各向异性方向和尺寸的至少两个以上的磁性薄膜构成，从而独立地优化增加读取信号值并减少临界值的影响 切换所需的当前值。
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8.发明授权公开(公告)号：US07312578B2
公开(公告)日：2007-12-25
申请号：US10808777
申请日：2004-03-24
申请人： Seung Min Lee , Byoung Chul Min , Young Hwan Choi
发明人： Seung Min Lee , Byoung Chul Min , Young Hwan Choi
摘要： A plasma lighting bulb is disclosed. The plasma lighting bulb includes a bulb emitting light, being formed of a transparent material, and having a plurality of grooves having a predetermined depth formed on a surface of the bulb, and a metal formed in the grooves, wherein a cross-section of the grooves is formed of one of a semicircular shape, a V-shape, and a polygonal shape.
摘要翻译： 公开了一种等离子体照明灯泡。 等离子体照明灯泡包括由透明材料形成的灯泡发光，并且具有形成在灯泡表面上的具有预定深度的多个槽以及形成在槽中的金属，其中横截面为 凹槽由半圆形，V形和多边形形状形成。
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公开(公告)号：US08329478B2
公开(公告)日：2012-12-11
申请号：US12707047
申请日：2010-02-17
申请人： Il-Jae Shi , Byoung-Chul Min , Kyung-Ho Shin
发明人： Il-Jae Shi , Byoung-Chul Min , Kyung-Ho Shin
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/22 , H01F41/307 , H01L43/12
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.
摘要翻译： 磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。 磁隧道结装置包括：i）具有可切换磁化方向的第一磁性层，ii）设置在第一磁性层上的非磁性层，iii）设置在非磁性层上并具有固定磁化方向的第二磁性层，iv） 设置在所述第二磁性层上的氧化防止层，v）设置在所述防氧化层上的第三磁性层，并且通过与所述第二磁性层的磁耦合来固定所述第二磁性层的磁化方向，以及vi）反铁磁层 设置在第三磁性层上并固定第三磁性层的磁化方向。
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10.发明申请LEARNING DEVICE AVAILABLE FOR USER CUSTOMIZED CONTENTS PRODUCTION AND LEARNING METHOD USING THE SAME 审中-公开可用于用户自定义内容的学习设备生产和使用相同的学习方法公开(公告)号：US20130034835A1
公开(公告)日：2013-02-07
申请号：US13562862
申请日：2012-07-31
申请人： Byoung-Chul Min
发明人： Byoung-Chul Min
摘要： Disclosed is a learning device available for user customized contents production and a learning method using the same capable of capable of allowing a user to directly record learning contents and learn while listening to and copying the recorded contents. The present disclosure can provide a formant of recorded contents and a formant of a user's speech when a user records and plays contents to be learned and copies the played contents and provides a matching rate of the formants, thereby performing pronunciation correction while progressing learning for the user desired contents
摘要翻译： 公开了一种可用于用户自定义内容制作的学习装置和使用该学习装置的学习方法，其能够允许用户直接记录学习内容并在听和复制所记录的内容的同时学习。 当用户记录和播放要学习的内容并复制播放的内容并提供共享器的匹配率时，本公开可以提供记录内容的共振峰和用户语音的共振峰，从而在进行学习的同时进行发音校正 用户所需的内容
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