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公开(公告)号:US20220389587A1
公开(公告)日:2022-12-08
申请号:US17750660
申请日:2022-05-23
发明人: Shoji IGUCHI , Akio ITAMURA , Shoichi FUKUI , Yukinori ODA , Masaaki SATO , Yoshihito II , Hiroki OKUBO
IPC分类号: C23C18/32
摘要: An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.
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公开(公告)号:US20240360586A1
公开(公告)日:2024-10-31
申请号:US18644980
申请日:2024-04-24
摘要: A method for regenerating an electrolytic copper plating solution containing a copper ion and at least one additive selected from the group consisting of a brightener, a carrier, and a leveler at least includes: ultraviolet-ozone treatment of oxidizing the electrolytic copper plating solution to decompose an organic impurity in the electrolytic copper plating solution; and activated carbon treatment of bringing activated carbon into contact with the electrolytic copper plating solution which has been subjected to the ultraviolet-ozone treatment to remove the organic impurity in the electrolytic copper plating solution.
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