公开(公告)号：US20130276873A1

公开(公告)日：2013-10-24

申请号：US13867066

申请日：2013-04-20

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Elizabeth Santori ,  Nathan S. Lewis ,  Harry A. Atwater

IPC: H01L31/0352

CPC classification number: H01L31/03529 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device having elongated structure having high-level injection are provided, as well as making and using such devices.

Abstract translation: 提供具有高级注入的细长结构的半导体器件，以及制造和使用这种器件。